RF Transistors from Richardson RFPD

RF Power Transistor -- A2T18S262W12NR3


 
 
RF Power Transistor -- A2T18S262W12NR3 -- View Larger Image
RF Power Transistor -- A2T18S262W12NR3-Image

This 56 W RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 1805 to 1880 MHz.



Manufacturer
NXP
Manufacturer Part Number
A2T18S262W12NR3
Product Category
RF Transistors
Packaging Characteristics
Package Type
Plastic

View Entire Datasheet

To view all product specifications available in these tables, click on the "View Entire Datasheet" button.

View Entire Datasheet
Performance
Power Gain
 
Output Power
 
Operating Frequency