RF Transistors from Richardson RFPD
RF Power Transistor -- A3T19H455W23SR6
This 81 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 1930 to 1990 MHz.
Specifications
Product Category
RF Transistors
Power Gain
16.4 dB
More Information
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