RF Transistors from Richardson RFPD
RF Power Transistor -- 2729GN-500V




The 2729GN-500V is an internally matched, COMMON SOURCE, class AB, GaN on SiC HEMT transistor capable of providing over 14.5 dB gain, 500 Watts of pulsed RF output power across the 2700MHz to 2900MHz band under 100μs pulse width and 10% duty cycle pulsing. This hermetically sealed transistor utilizes gold metallization and eutectic attach to provide highest reliability and superior ruggedness.
Specifications
Manufacturer
Microsemi Corp.
Manufacturer Part Number
2729GN-500V
Product Category
RF Transistors
Transistor Technology / Material
GaN
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