RF Transistors from Richardson RFPD

RF Power Transistor -- MDS800

RF Power Transistor -- MDS800 -- View Larger Image
RF Power Transistor -- MDS800-Image

The MDS800 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems at 1090 MHz, with the pulse width and duty required for MODE-S applications. The device has gold thin-film metallization and emitter ballasting for proven highest MTTF. The transistor includes input and output prematch for broadband capability. Low thermal resistance package reduces junction temperature, extends life.

Microsemi Corp.
Manufacturer Part Number
Product Category
RF Transistors
Power Gain
8.6 dB

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Output Power
Operating Frequency