RF Transistors from Richardson RFPD
RF Power Transistor -- A2G22S160-01SR3
This 32 W RF power GaN transistor is designed for cellular base station applications covering the frequency range of 1800 to 2200 MHz. This part is characterized and performance is guaranteed for applications operating in the 1800 to 2200 MHz band.
Specifications
Product Category
RF Transistors
Transistor Technology / Material
GaN
More Information
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