RF Transistors from Richardson RFPD
RF Power Transistor -- 1315GN-700V




The 1315GN-700V is an internally matched, COMMON SOURCE, class AB GaN on SiC HEMT transistor capable of providing over 17dB gain, 700 Watts of pulsed RF output power at 150μs pulse width, 10% duty factor across the 1300 to 1450 MHz band. The transistor has internal pre-match for optimal performance. This transistor is specifically designed for L band radar applications. It utilizes gold metallization and eutectic attach to provide highest reliability and superior ruggedness.
Specifications
Manufacturer
Microsemi Corp.
Manufacturer Part Number
1315GN-700V
Product Category
RF Transistors
Transistor Technology / Material
GaN
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