RF Transistors from Richardson RFPD

RF Power Transistor -- A3T18H455W23SR6


 
 
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RF Power Transistor -- A3T18H455W23SR6-Image

This 87 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 1805 to 1880 MHz.


Specifications

Manufacturer
NXP
Manufacturer Part Number
A3T18H455W23SR6
Product Category
RF Transistors
Power Gain
16.7 dB
Output Power
 
Operating Frequency