RF Transistors from Richardson RFPD

RF Power Transistor -- AFT09H310-03SR6

RF Power Transistor -- AFT09H310-03SR6 -- View Larger Image
RF Power Transistor -- AFT09H310-03SR6-Image

RF Power LDMOS Transistors. N−Channel Enhancement−Mode Lateral MOSFETs. These 56 watt asymmetrical Doherty RF power LDMOS transistors are designed for cellular base station applications covering the frequency range of 920 to 960 MHz. Features • Advanced High Performance In−Package Doherty • Greater Negative Gate−Source Voltage Range for Improved Class C Operation • Designed for Digital Predistortion Error Correction Systems • In Tape and Reel. R6 Suffix = 150 Units, 56 mm Tape Width, 13−inch Reel.

Manufacturer Part Number
Product Category
RF Transistors
Power Gain
18 dB

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Output Power
Operating Frequency