RF Power LDMOS Transistors. N−Channel Enhancement−Mode Lateral MOSFETs. These 56 watt asymmetrical Doherty RF power LDMOS transistors are designed for cellular base station applications covering the frequency range of 920 to 960 MHz. Features • Advanced High Performance In−Package Doherty • Greater Negative Gate−Source Voltage Range for Improved Class C Operation • Designed for Digital Predistortion Error Correction Systems • In Tape and Reel. R6 Suffix = 150 Units, 56 mm Tape Width, 13−inch Reel.