RF Transistors from Richardson RFPD
RF Power Transistor -- MDSGN-750ELMV




The MDSGN-750ELMV is an internally matched, COMMON SOURCE, class AB, GaN on SiC HEMT transistor capable of providing over 18.5 dB gain, 750 Watts of pulsed RF output power at ELM pulse format across the 1030 to 1090 MHz band. The transistor has internal pre-match for optimal performance. This hermetically sealed transistor is specifically designed for Mode-S ELM Avionics applications. It utilizes gold metallization and eutectic attach to provide highest reliability and superior ruggedness.
Specifications
Manufacturer
Microsemi Corp.
Manufacturer Part Number
MDSGN-750ELMV
Product Category
RF Transistors
Transistor Technology / Material
GaN
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