RF Transistors from Richardson RFPD

RF Power Transistor -- MHT2000GNR1

 
 
RF Power Transistor -- MHT2000GNR1 -- View Larger Image
RF Power Transistor -- MHT2000GNR1-Image

RF LDMOS Integrated Power Amplifiers. Wideband integrated circuit is suitable for industrial heating applications operating at 2450 MHz. This multi-stage structure is rated for 26 to 32 V operation in both CW and pulse applications.


Specifications

Product Category
RF Transistors
Package Type
Plastic
Power Gain
 
Output Power
 
Operating Frequency