RF Transistors from Richardson RFPD

RF Power Transistor -- DME800


 
 
RF Power Transistor -- DME800 -- View Larger Image
RF Power Transistor -- DME800-Image

The DME800 is a high power COMMON BASE bipolar transistor. It is designed for pulsed DME systems at 1025 to 1150 MHz, with the pulse width and duty required for DME applications. The device has gold thin-film metallization for proven highest MTTF. The transistor includes input and output prematch for broadband capability. Low thermal resistance package reduces junction temperature, extends life.



Manufacturer
Microsemi Corp.
Manufacturer Part Number
DME800
Product Category
RF Transistors
Performance
Power Gain
10 dB

View Entire Datasheet

To view all product specifications available in these tables, click on the "View Entire Datasheet" button.

View Entire Datasheet
Output Power
 
Operating Frequency