RF Transistors from Richardson RFPD

RF Power Transistor -- DME800

RF Power Transistor -- DME800 -- View Larger Image
RF Power Transistor -- DME800-Image

The DME800 is a high power COMMON BASE bipolar transistor. It is designed for pulsed DME systems at 1025 to 1150 MHz, with the pulse width and duty required for DME applications. The device has gold thin-film metallization for proven highest MTTF. The transistor includes input and output prematch for broadband capability. Low thermal resistance package reduces junction temperature, extends life.

Microsemi Corp.
Manufacturer Part Number
Product Category
RF Transistors
Power Gain
10 dB

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Output Power
Operating Frequency