RF Transistors from Richardson RFPD

RF Power Transistor -- MRF6V10010NR4

RF Power Transistor -- MRF6V10010NR4 -- View Larger Image
RF Power Transistor -- MRF6V10010NR4-Image

RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET. RF Power transistor designed for applications operating at frequencies between 960 and 1400 MHz, 1% to 20% duty cycle. This device is suitable for use in pulsed applications.

Manufacturer Part Number
Product Category
RF Transistors
Power Gain
25 dB

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Output Power
Operating Frequency