RF Transistors from Richardson RFPD

RF Power Transistor -- MRF6V10010NR4


 
 
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RF Power Transistor -- MRF6V10010NR4-Image

RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET. RF Power transistor designed for applications operating at frequencies between 960 and 1400 MHz, 1% to 20% duty cycle. This device is suitable for use in pulsed applications.



Manufacturer
NXP
Manufacturer Part Number
MRF6V10010NR4
Product Category
RF Transistors
Performance
Power Gain
25 dB

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Output Power
 
Operating Frequency