The CHKA011aSXA is an unmatched packaged Gallium Nitride High Electron Mobility Transistor.
It offers general purpose and broadband solutions for a variety of RF power applications. It is well suited for multi-purpose applications such as radar and telecommunication.
The CHKA011aSXA is developed on a 0.5 um gate length GaN HEMT process. It requires an external matching circuitry.
It is proposed in ceramic metal flange power package, compliant with the RoHS N 2011/65 and REACH N1907/2006 directives.