RF Transistors from Richardson RFPD
RF Power Transistor -- MRFE6VP61K25HS6
RF Power Field Effect Transistors. High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs. These high ruggedness devices are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace an
Specifications
Product Category
RF Transistors
Power Gain
22.9 dB
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