RF Transistors from Richardson RFPD
RF Power Transistor -- GTVA126001EC-V1
GTVA126001EC is a 600-watt GaN on SiC high electron mobility transistor (HEMT) for use in the 1200 to 1400 MHz frequency band. It features input matching, high efficiency, and thermally-enhanced package.
Specifications
Manufacturer
Wolfspeed
Manufacturer Part Number
GTVA126001EC-V1-R0
Product Category
RF Transistors
Transistor Technology / Material
GaN
More Information
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