RF Transistors from Richardson RFPD

RF Power Transistor -- AFT26H160-4S4R3


 
 
RF Power Transistor -- AFT26H160-4S4R3 -- View Larger Image
RF Power Transistor -- AFT26H160-4S4R3-Image

RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET. This 32 watt asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2496 to 2690 MHz.


Specifications

Product Category
RF Transistors
Power Gain
14.9 dB
Output Power
 
Operating Frequency