RF Transistors from Richardson RFPD
RF Power Transistor -- MRFE6S8046GNR1
RF Power Field Effect Transistors. N-Channel Enhancement-Mode Lateral MOSFETs. Designed for GSM and GSM EDGE base station applications with frequencies from 864 to 894 MHz. Suitable for CDMA and multicarrier amplifier applications.
Specifications
Product Category
RF Transistors
Power Gain
19.8 dB
More Information
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