RF Transistors from Richardson RFPD

RF Power Transistor -- CGHV1J070D-GP4

RF Power Transistor -- CGHV1J070D-GP4 -- View Larger Image
RF Power Transistor -- CGHV1J070D-GP4-Image

CGHV1J070D is a high voltage gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on a silicon carbide substrate, using a 0.25 um gate length fabrication process. This GaN-on-SiC product offers superior high frequency, high efficiency features. It is ideal for a variety of applications operating from 10 MHz to 18 GHz at 40 V with a high breakdown voltage.


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RF Transistors
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