RF Transistors from Richardson RFPD

RF Power Transistor -- CGHV1J070D-GP4


 
 
RF Power Transistor -- CGHV1J070D-GP4 -- View Larger Image
RF Power Transistor -- CGHV1J070D-GP4-Image

CGHV1J070D is a high voltage gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on a silicon carbide substrate, using a 0.25 um gate length fabrication process. This GaN-on-SiC product offers superior high frequency, high efficiency features. It is ideal for a variety of applications operating from 10 MHz to 18 GHz at 40 V with a high breakdown voltage.


Specifications

Manufacturer
Wolfspeed
Manufacturer Part Number
CGHV1J070D-GP4
Product Category
RF Transistors
Transistor Technology / Material
GaN
Package Type
 
Power Gain
 
Output Power
 
Operating Frequency