The 3135GN-280LV is an internally matched, COMMON SOURCE, class AB, GaN on SiC HEMT transistor capable of providing over 13 dB gain, 280 Watts of pulsed RF output power at 200 uS pulse width, 20% duty factor across the 3100 to 3500 MHz band. This hermetically sealed transistor utilizes gold metallization and eutectic attach to provide highest reliability and superior ruggedness. Market Application - High Power S-Band Pulsed Radar