RFMW Ltd. Datasheets for RF Transistors
RF transistors are designed to handle high-power radio frequency (RF) signals in devices such as stereo amplifiers, radio transmitters, and television monitors.
RF Transistors: Learn more
Product Name | Notes |
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1 Watt 2.3 GHz Class A linear Power Trans. | |
200 W LDMOS power transistor for avionics applications at frequencies from 1030 MHz to 1090 MHz. | |
200 W LDMOS power transistor for ISM applications at frequencies from 700 MHz to 1000 MHz. Features and benefits Easy power control Integrated ESD protection Excellent ruggedness High efficiency Excellent... | |
Ampleon's 1400 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band. Features and benefits Easy power control Integrated ESD protection Excellent... | |
Ampleon's 200 W LDMOS RF power transistor for broadcast transmitter and industrial applications. The transistor is suitable for the frequency range HF to 1500 MHz. The excellent ruggedness and broadband... | |
Ampleon's 35 W LDMOS RF power transistor for broadcast transmitter and industrial applications. The transistor is suitable for the frequency range HF to 1400 MHz. The excellent ruggedness and broadband... | |
Ampleon's 500 W to 600 W LDMOS power transistor for broadcast applications and industrial applications in the HF to 500 MHz band. Features and benefits Integrated ESD protection Excellent ruggedness... | |
Ampleon's 600 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications. Features... | |
Ampleon's 700 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band. Features and benefits Integrated ESD protection Excellent ruggedness Designed for... | |
Ampleon's 750 W LDMOS RF power transistor for broadcast Doherty transmitter applications. The excellent ruggedness of BLF888E makes it ideal for digital and analog transmitter applications. | |
Ampleon's BLCU188XRS is a 1400 W, extremely rugged, LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band. | |
Ampleon's Dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor encapsulated in a 4-lead, SOT262A1 balanced flange package with two ceramic caps. The mounting flange provides the common source connection... | |
Ampleon's Silicon N-channel enhancement mode vertical D-MOS transistor encapsulated in a 4-lead, SOT121B flanged package, with a ceramic cap. All leads are isolated from the flange. Features and benefits High... | |
Dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor encapsulated in a 4-lead, SOT262A1 balanced flange package with two ceramic caps. The mounting flange provides the common source connection for... | |
Microwave Transistor, 3 W 3 GHz | |
NXP BFU690F NPN silicon microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package. 40 GHz fT silicon technology High output third-order intercept point... | |
NXP BFU710F NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package. 110 GHz fT silicon germanium technology High maximum power... | |
NXP BFU760F NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package. 110 GHz fT silicon germanium technology High maximum output... | |
Pulsed Avionics RF Power Transistor | |
RF Power Transistor, 0 to 1 GHz, 100 W, 22 dB, 40 V, LDMOS, SOT-467C | |
RF Power Transistor, 0 to 1 GHz, 160 W, 20 dB, 50 V, SOT467B, LDMOS | |
RF Power Transistor, 0 to 1.4 GHz, 100 W, 18 dB, 32 V, LDMOS, SOT-540A | |
RF Power Transistor, 0 to 1.4 GHz, 200 W, 18 dB, 32 V, LDMOS, SOT1121B | |
RF Power Transistor, 0.0018 to 0.52 GHz, 31 W, 17.7 dB, 13.6 V, SOT1732, LDMOS | |
RF Power Transistor, 0.0018 to 0.941 GHz, 3 W, Typ Gain in dB is 20.8 @ 520 MHz, 7.5 V, SOT-89A, LDMOS | |
RF Power Transistor, 0.0018 to 0.941 GHz, 31 W, Typ. Gain in dB is 17.2 @ 870 MHz, 13.6 V, LDMOS, SOT1732-1 | |
RF Power Transistor, 0.0036 to 2.2 GHz, 10 W, 18.5 dB, 28 V, LDMOS, SOT-538A | |
RF Power Transistor, 0.005 to 0.175 GHz, 150 W, 20 dB @ 30 MHz, 28 V, VDMOS, .5004LFL | |
RF Power Transistor, 0.005 to 0.225 GHz, 300 W, 27.2 dB, 50 V, LDMOS, SOT-502A | |
RF Power Transistor, 0.005 to 0.5 GHz, 300 W, 27.2 dB, 50 V, LDMOS, SOT-502B | |
RF Power Transistor, 0.005 to 0.86 GHz, 100 W, 21 dB, 40 V, LDMOS, SOT-467C | |
RF Power Transistor, 0.005 to 0.86 GHz, 140 W, 21 dB, 50 V, LDMOS, SOT-467C | |
RF Power Transistor, 0.005 to 1.3 GHz, 250 W, 17 dB, 50 V, LDMOS, SOT-1121A | |
RF Power Transistor, 0.005 to 1.3 GHz, 250 W, 17 dB, 50 V, LDMOS, SOT-1121B | |
RF Power Transistor, 0.01 to 0.1 GHz, 1200 W, 26 dB, 50 V, LDMOS, SOT-539A | |
RF Power Transistor, 0.01 to 0.11 GHz, 1400 W, 29 dB, 50 V, LDMOS, SOT-539A | |
RF Power Transistor, 0.01 to 0.11 GHz, 1400 W, 29 dB, 50 V, LDMOS, SOT539B | |
RF Power Transistor, 0.01 to 0.23 GHz, 20 W, 27.5 dB, 50 V, LDMOS, SOT-467C | |
RF Power Transistor, 0.01 to 0.5 GHz, 1200 W, 26 dB, 50 V, LDMOS, SOT-539A | |
RF Power Transistor, 0.01 to 0.6 GHz, 250 W, 28 dB, 50 V, SOT1121-B, LDMOS | |
RF Power Transistor, 0.01 to 0.60 GHz, 1400 W, 24.4 dB, Rugged, LDMOS, SOT1248C | |
RF Power Transistor, 0.01 to 0.86 GHz, 140 W, 21 dB, 50 V, LDMOS, SOT-467B | |
RF Power Transistor, 0.01 to 0.86 GHz, 200 W, 20.6 dB, 50 V, SOT502B, LDMOS | |
RF Power Transistor, 0.0136 to 0.52 GHz, 70 W, 18.5 dB, 12.5 V, TO-270WB-4, LDMOS | |
RF Power Transistor, 0.03 to 0.15 GHz, 1900 W, 23 dB, 50 V, SOT539A, LDMOS | |
RF Power Transistor, 0.03 to 0.15 GHz, 1900 W, 23 dB, 50 V, SOT539B, LDMOS | |
RF Power Transistor, 0.03 to 0.50 GHz, 1500 W, 26.5 dB, 50 V, SOT539A, LDMOS | |
RF Power Transistor, 0.03 to 0.50 GHz, 1500 W, 26.5 dB, 50 V, SOT539B, LDMOS | |
RF Power Transistor, 0.1 to 0.15 GHz, 40 W, 10 dB, 27 V, BiPolar, Stud, VHF | |
RF Power Transistor, 0.1 to 0.15 GHz, 40 W, 8.2 dB, 27 V, BiPolar, Stud, VHF | |
RF Power Transistor, 0.1 to 0.2 GHz, 12 W, 10.8 dB, 28 V, BiPolar, Stud, VHF | |
RF Power Transistor, 0.1 to 0.2 GHz, 15 W, 6.3 dB, 12.5 V, BiPolar, Stud, VHF | |
RF Power Transistor, 0.1 to 0.2 GHz, 25 W, 6.2 dB, 12.5 V, BiPolar, Stud, VHF | |
RF Power Transistor, 0.1 to 0.2 GHz, 25 W, 8.5 dB, 28 V, BiPolar, Stud, VHF | |
RF Power Transistor, 0.1 to 0.2 GHz, 3 W, 13 dB, 28 V, BiPolar, Stud | |
RF Power Transistor, 0.1 to 0.2 GHz, 30 W, 5.7 dB, 12.5 V, BiPolar, Stud, VHF | |
RF Power Transistor, 0.1 to 0.2 GHz, 40 W, 4.5 dB, 12.5 V, BiPolar, Stud, VHF | |
RF Power Transistor, 0.1 to 0.2 GHz, 40 W, 8.2 dB, 28 V, BiPolar, Stud , VHF | |
RF Power Transistor, 0.1 to 0.2 GHz, 8 W, 12.5 V, VHF | |
RF Power Transistor, 0.10 to 3.6 GHz, 6 W, Typ Gain in dB is 22.5 @ 2170 MHz, 28 V, LDMOS, SOT1811-2 | |
RF Power Transistor, 0.13 to 0.4 GHz, 13.5 W, 28 V | |
RF Power Transistor, 0.136 to 0.941 GHz, 16 W, 17.2 dB, 12.5 V, PLD-1.5W, LDMOS | |
RF Power Transistor, 0.136 to 0.941 GHz, 4 W, Typ.Gain in dB is 20.9 @ 520 MHz, 7.5 V, LDMOS, SOT-89A | |
RF Power Transistor, 0.136 to 0.941 GHz, 6 W, 18.3 dB, 7.5 V, PLD-1.5W, LDMOS | |
RF Power Transistor, 0.136 to 0.941 GHz, 6 W, 20.3 dB, 7.5 V, DFN 4 x 6, LDMOS | |
RF Power Transistor, 0.175 to 0.23 GHz, 300 W, 13.5 dB, 32 V, SOT262A1 | |
RF Power Transistor, 0.175 to 0.4 GHz, 80 W, 28 V | |
RF Power Transistor, 0.425 to 0.45 GHz, 200 W, 21 dB, 28 V, SOT1270-1, LDMOS | |
RF Power Transistor, 0.45 to 0.512 GHz, 2 W, 9 dB, 12.5 V, UHF | |
RF Power Transistor, 0.47 to 0.79 GHz, 750 W, 17 dB, SOT539B, LDMOS | |
RF Power Transistor, 0.47 to 0.80 GHz, 900 W, 18 dB, 50 V, SOT539A, LDMOS | |
RF Power Transistor, 0.47 to 0.86 GHz, 350 W, 20 dB, 50 V, LDMOS, SOT-1121A | |
RF Power Transistor, 0.47 to 0.86 GHz, 350 W, 20 dB, 50 V, LDMOS, SOT-1121B | |
RF Power Transistor, 0.47 to 0.86 GHz, 500 W, 20 dB, 42 V, LDMOS, SOT-539A | |
RF Power Transistor, 0.47 to 0.86 GHz, 500 W, 20 dB, 42 V, SOT539B, LDMOS | |
RF Power Transistor, 0.47 to 0.86 GHz, 600 W, 20 dB, 50 V, LDMOS, SOT-539B | |
RF Power Transistor, 0.47 to 0.86 GHz, 650 W, 20 dB, 50 V, LDMOS, SOT-539A | |
RF Power Transistor, 0.47 to 0.86 GHz, 650 W, 20 dB, 50 V, LDMOS, SOT-539B | |
RF Power Transistor, 0.7 to 1.0 GHz, 300 W, 20.5 dB, 28 V, LDMOS | |
RF Power Transistor, 0.70 to 1 GHz, 135 W, 21 dB, 28 V, SOT502A, LDMOS | |
RF Power Transistor, 0.70 to 1 GHz, 135 W, 21 dB, 28 V, SOT502B, LDMOS | |
RF Power Transistor, 0.70 to 1 GHz, 160 W, 22.5 dB, 32 V, SOT502A, LDMOS | |
RF Power Transistor, 0.70 to 1 GHz, 160 W, 22.5 dB, 32 V, SOT502B, LDMOS | |
RF Power Transistor, 0.70 to 1 GHz, 200 W, 20 dB, 28 V, LDMOS, SOT-502B | |
RF Power Transistor, 0.716 to 0.96 GHz, 270 W, 20 dB, 28 V, SOT1244B, LDMOS | |
RF Power Transistor, 0.716 to 0.96 GHz, 270 W, 20 dB, 28 V, SOT1244C, LDMOS | |
RF Power Transistor, 0.716 to 0.96 GHz, 400 W 20.6 dB, 28 V, LDMOS, SOT1242B | |
RF Power Transistor, 0.716 to 0.96 GHz, 400 W, 20.6 dB, 28 V, LDMOS | |
RF Power Transistor, 0.764 to 0.941 MHz, 57 W, Typ Gain in dB is 17.5 @ 870 MHz, 12.5 V, LDMOS, SOT1736-1 | |
RF Power Transistor, 0.79 to 0.82 GHz, 40 W, 23 dB, 28 V, LDMOS, SOT-1112A | |
RF Power Transistor, 0.79 to 0.96 GHz, 270 W, 19.5 dB, 28 V, LDMOS | |
RF Power Transistor, 0.79 to 0.96 GHz, 270 W, 19.5 dB, 28 V, SOT1244C, LDMOS | |
RF Power Transistor, 0.79 to 0.96 GHz, 270 W, SOT1244B, LDMOS | |
RF Power Transistor, 0.82 to 0.96 GHz, 270 W, 18.5 dB, 28 V, SOT502B, LDMOS | |
RF Power Transistor, 0.859 to 0.96 GHz, 400 W, 17.4 dB, 32 V, SOT1258-7, LDMOS | |
RF Power Transistor, 0.90 to 0.93 GHz, 500 W, 18 dB, 50 V, SOT502A, LDMOS | |
RF Power Transistor, 0.90 to 0.93 GHz, 500 W, 18 dB, 50 V, SOT502B, LDMOS | |
RF Power Transistor, 0.90 to 0.93 GHz, 500 W, 19.5 dB, 50 V, SOT502A, LDMOS | |
RF Power Transistor, 0.90 to 0.93 GHz, 500 W, 19.5 dB, 50 V, SOT502B, LDMOS | |
RF Power Transistor, 0.92 to 0.96 GHz, 160 W, 19.7 dB, 30 V, LDMOS, SOT-502A | |
RF Power Transistor, 0.92 to 0.96 GHz, 160 W, 19.7 dB, 30 V, LDMOS, SOT-502B | |
RF Power Transistor, 0.92 to 0.96 GHz, 250 W, 19.5 dB, 30 V, LDMOS, SOT-502B | |
RF Power Transistor, 0.925 to 0.960 GHz, 160 W, 19.9 dB, 30 V, SOT1244B, LDMOS | |
RF Power Transistor, 0.96 to 1.2 GHz, 500 W, 17 dB, 50 V, LDMOS, SOT-634A | |
RF Power Transistor, 1 GHz, 4W, 6 dB, 28V | |
RF Power Transistor, 1 to 2 GHz, 20 W, 8.2 dB, 28 V, BiPolar, Stud, VHF | |
RF Power Transistor, 1 Watt 1 GHz 28 V Studless | |
RF Power Transistor, 1.03 to 1.09 GHz, 200 W, 20 dB, 28 V, LDMOS, SOT-502A | |
RF Power Transistor, 1.03 to 1.09 GHz, 200 W, 20 dB, 28 V, LDMOS, SOT-502C | |
RF Power Transistor, 1.03 to 1.09 GHz, 300 W, 16.5 dB, 32V, SOT502A, LDMOS | |
RF Power Transistor, 1.03 to 1.09 GHz, 300 W, 16.5 dB, 32V, SOT502B, LDMOS | |
RF Power Transistor, 1.03 to 1.09 GHz, 300 W, 16.5 dB, 32V, SOT502E, LDMOS | |
RF Power Transistor, 1.03 to 1.09 GHz, 300 W, 16.5 dB, 32V, SOT502F, LDMOS | |
RF Power Transistor, 1.03 to 1.09 GHz, 300 W, 20.5 dB, SOT502A, LDMOS | |
RF Power Transistor, 1.03 to 1.09 GHz, 600 W, 17 dB, 48 V, LDMOS, SOT-539A | |
RF Power Transistor, 1.3 GHz, 250 W, 17 dB, 50 V, SOT1121E, LDMOS | |
RF Power Transistor, 1.425 to 1.511 GHz, 400 W, 16.2 dB, 32 V, SOT1258-3. LDMOS | |
RF Power Transistor, 1.45 to 1.55 GHz, 200 W, LDMOS | |
RF Power Transistor, 1.45 to 1.55 GHz, 300 W, 17 dB, LDMOS | |
RF Power Transistor, 1.45 to 1.55 GHz, 300 W, LDMOS | |
RF Power Transistor, 1.452 to 1.492 GHz, 500 W, 15 dB, 50 V, LDMOS, SOT-539A | |
RF Power Transistor, 1.452 to 1.492 GHz, 500 W, 15 dB, 50 V, LDMOS, SOT-539B | |
RF Power Transistor, 1.452 to 1.511 GHz, 400 W, 16.5 dB, 32 V, SOT1258-7, LDMOS | |
RF Power Transistor, 1.48 to 1.51 GHz, 250 W, 18.5 dB, 28 V, LDMOS | |
RF Power Transistor, 1.7 to 2.1 GHz, 200 W, 19 dB, 28 V, SOT502B, LDMOS | |
RF Power Transistor, 1.8 to 2 GHz, 160 W, 17.5 dB, 28 V, LDMOS, SOT-1121A | |
RF Power Transistor, 1.8 to 2 GHz, 160 W, 17.5 dB, 28 V, LDMOS, SOT1121B | |
RF Power Transistor, 1.8 to 2 GHz, 200 W, 17.5 dB, 28 V, SOT1120B, LDMOS | |
RF Power Transistor, 1.8 to 2.0 GHz, 230 W, 18 dB, 28 V, SOT1239B, LDMOS | |
RF Power Transistor, 1.8 to 2.0 GHz, 400 W, 15.5 dB, 32 V, SOT1258-3, LDMOS | |
RF Power Transistor, 1.8 to 2.05 GHz, 160 W, 18 dB, 28 V, LDMOS, SOT-1121B | |
RF Power Transistor, 1.8 to 2.05 GHz, 160 W, 18 dB, 28 V, SOT1121A LDMOS | |
RF Power Transistor, 1.8 to 2.05 GHz, 160 W, LDMOS | |
RF Power Transistor, 1.8 to 2.1 GHz, 40 W, dB, 28 V, LDMOS, SOT1121B | |
RF Power Transistor, 1.8- 2 GHz, 220 W, 18.9 dB, 28V, SOT502B, LDMOS | |
RF Power Transistor, 1.805 to 1.88 GHz, 160 W, 16.6 dB, 30 V, SOT1275-3, LDMOS | |
RF Power Transistor, 1.805 to 1.88 GHz, 200 W, 18 dB, 28 V, LDMOS, SOT-502B | |
RF Power Transistor, 1.805 to 1.88 GHz, 250 W, 18 dB, 28 V, LDMOS, SOT-539B | |
RF Power Transistor, 1.805 to 1.88 GHz, 400 W, 16.2 dB, 32 V, SOT1258-7, LDMOS | |
RF Power Transistor, 1.805 to 1.88 GHz, 550 W, 15.4 dB, 28 V, SOT1258-7, LDMOS | |
RF Power Transistor, 1.805 to 1.990 GHz, 360 W, 15.7 dB, SOT1258-3, LDMOS | |
RF Power Transistor, 1.805 to 1.990 GHz, 470 W, 15.7 dB, 28 V, SOT1258-3, LDMOS | |
RF Power Transistor, 1.805 to 1.995 GHz, 120 W, 19.2 dB, 28 V, SOT1275-3, LDMOS | |
RF Power Transistor, 1.805 to 1.995 GHz, 19 dB Gain, 400 W, LDMOS, SOT1242B | |
RF Power Transistor, 1.805 to 1.995 GHz, 19 dB Gain, 400 W, LDMOS, SOT1242C | |
RF Power Transistor, 1.805 to 1.995 GHz, 240 W, 18 dB, 28 V, SOT1275-3, LDMOS | |
RF Power Transistor, 1.805 to 1.995 GHz, 400 W, 19 dB, 28V, LDMOS | |
RF Power Transistor, 1.805 to 2.0 GHz, 160 W, 19.8 dB, 28 V, SOT1275-1, LDMOS | |
RF Power Transistor, 1.805 to 2.025 GHz, 160 W, 15 dB, 28 V, SOT1275-1, LDMOS | |
RF Power Transistor, 1.81 to 1.88 GHz, 140 W, 17 dB, 28 V, LDMOS | |
RF Power Transistor, 1.81 to 1.88 GHz, 90 W, 19 dB, 28 V, LDMOS, SOT-1121B | |
RF Power Transistor, 1.9 to 2.0 GHz, 310 W, 16.9 dB, 28 V, SOT1258-3, LDMOS | |
RF Power Transistor, 1.93 to 1.99 GHz, 160 W, 18 dB, 28 V, LDMOS, SOT-1121B | |
RF Power Transistor, 1.930 to 1.995 GHz, 310 W, 17 dB, 28 V, SOT1258-3, LDMOS | |
RF Power Transistor, 10 to 600 MHz, 200 W, 28 dB, 50 V, SOT1121A, LDMOS | |
RF Power Transistor, 10 to 600 MHz, 25 db Gain, 350 W, 50 V, SOT1121A | |
RF Power Transistor, 10 to 600 MHz, 25 db Gain, 350 W, 50 V, SOT1121B | |
RF Power Transistor, 10 to 860 MHz, 200 W, 20.6 dB, SOT502A, LDMOS | |
RF Power Transistor, 136 to 941 MHz, 7 W, 15.2 dB, 7.5 V, LDMOS | |
RF Power Transistor, 175 MHz, 300W, 28V, MOSFET | |
RF Power Transistor, 175 MHz, 40 W, 7.6 dB, 28 V, BiPolar, Stud | |
RF Power Transistor, 18 V, SOT122A | |
RF Power Transistor, 2 to 2.2 GHz, 160 W, 18 dB, 32 V, LDMOS | |
RF Power Transistor, 2 to 2.2 GHz, 160 W, LDMOS | |
RF Power Transistor, 2 to 2.2 GHz, 40 W, 18.5 dB, 28 V, SOT1112B, LDMOS | |
RF Power Transistor, 2 to 2.2 GHz, 75 W, LDMOS, SOT-896B | |
RF Power Transistor, 2.0 to 2.2 GHz, 140 W, 18.5 dB, 28V, SOT502B, LDMOS | |
RF Power Transistor, 2.1 to 2.17 GHz, 200 W, 20 dB, 28 V, SOT1244B, LDMOS | |
RF Power Transistor, 2.1 to 2.17 GHz, 200 W, 20 dB, 28 V, SOT1244C, LDMOS | |
RF Power Transistor, 2.1 to 2.2 GHz, 205 W, 18.3 dB, 28 V, SOT1239B, LDMOS | |
RF Power Transistor, 2.11 to 2.17 GHz , 450W, 14 dB, SOT1258-1 | |
RF Power Transistor, 2.11 to 2.17 GHz, 10 W, 19 dB, 28 V, LDMOS, SOT-538A | |
RF Power Transistor, 2.11 to 2.17 GHz, 200 W, 18.5 dB, 28 V, LDMOS, SOT-502B | |
RF Power Transistor, 2.11 to 2.17 GHz, 240 W, 19 dB, 28 V, SOT502B, LDMOS | |
RF Power Transistor, 2.11 to 2.17 GHz, 250 W, 18.5 dB, 28 V, LDMOS, SOT-539B | |
RF Power Transistor, 2.11 to 2.17 GHz, 270 W, 17.7 dB, 28 V, SOT1244B, LDMOS | |
RF Power Transistor, 2.11 to 2.17 GHz, 270 W, 17.7 dB, 28 V, SOT1244C, LDMOS | |
RF Power Transistor, 2.11 to 2.17 GHz, 270 W, 17.7 dB, 28 V, SOT502B, LDMOS | |
RF Power Transistor, 2.11 to 2.17 GHz, 40 W, 19 dB, 28 V, LDMOS, SOT-1112A | |
RF Power Transistor, 2.11 to 2.2 GHz, 400 W, 15.3 dB, 32 V, SOT1258-7, LDMOS | |
RF Power Transistor, 2.11- 2.17 GHz, 220 W, 17 dB, 28 V, LDMOS | |
RF Power Transistor, 2.3 to 2.4 GHz, 100 W, 17.3 dB, 28 V, LDMOS, SOT-502B | |
RF Power Transistor, 2.3 to 2.4 GHz, 100 W, 18 dB, 28 V, SOT502A, LDMOS | |
RF Power Transistor, 2.3 to 2.4 GHz, 140 W, 18.5 dB, 28 V, LDMOS, SOT-502B | |
RF Power Transistor, 2.3 to 2.4 GHz, 160 W, 18.5 dB, 28 V, SOT539B, LDMOS | |
RF Power Transistor, 2.3 to 2.4 GHz, 170 W, 15.5 dB, 30 V, SOT1275-3, LDMOS | |
RF Power Transistor, 2.3 to 2.4 GHz, 200 W, 17.2 dB, 28 V, LDMOS, SOT539B | |
RF Power Transistor, 2.3 to 2.4 GHz, 240 W, 14.5 dB, 28 V, SOT1252-1, LDMOS | |
RF Power Transistor, 2.3 to 2.69 GHz, 60 W, 15 dB, 28 V, SOT1275-3, LDMOS | |
RF Power Transistor, 2.3 to 2.7 GHz, 10 W, 19 dB, 28 V, LDMOS, SOT-975C | |
RF Power Transistor, 2.4 to 2.5 GHz, 12 W, 18 dB, 28 V, SOT975C, LDMOS | |
RF Power Transistor, 2.4 to 2.5 GHz, 12 W, 19 dB, 28 V, SOT975B, LDMOS | |
RF Power Transistor, 2.4 to 2.5 GHz, 140 W, 18.5 dB, 28 V, SOT502A, LDMOS | |
RF Power Transistor, 2.4 to 2.5 GHz, 140 W, 18.5 dB, 28 V, SOT502B, LDMOS | |
RF Power Transistor, 2.4 to 2.5 GHz, 140 W, 19 dB, 28 V, SOT502A, LDMOS | |
RF Power Transistor, 2.4 to 2.5 GHz, 140 W, 19 dB, 28 V, SOT502B, LDMOS | |
RF Power Transistor, 2.4 to 2.5 GHz, 16 dB, 300 W, 28 V, LDMOS, SOT1250 | |
RF Power Transistor, 2.4 to 2.5 GHz, 180 W, 13.3 dB, 28 V, SOT539A, LDMOS | |
RF Power Transistor, 2.4 to 2.5 GHz, 180 W, 13.3 dB, 28 V, SOT539B, LDMOS | |
RF Power Transistor, 2.4 to 2.5 GHz, 250 W, 13 dB, 28 V, LDMOS, SOT-539A | |
RF Power Transistor, 2.4 to 2.5 GHz, 250 W, 13 dB, 28 V, LDMOS, SOT-539B | |
RF Power Transistor, 2.4 to 2.5 GHz, 250 W, 18 dB, 32 V, SOT1270-1, LDMOS | |
RF Power Transistor, 2.4 to 2.5 GHz, 250 W, 18.5 dB, 32 V, SOT1270-1, LDMOS | |
RF Power Transistor, 2.4 to 2.5 GHz, 250 W,15 dB, 28 V, SOT539A, LDMOS | |
RF Power Transistor, 2.4 to 2.5 GHz, 30 W, 18.5 dB, 32 V, SOT1135-B, LDMOS | |
RF Power Transistor, 2.4 to 2.5 GHz, 30 W, 18.5 dB, 32 V, SOT1135A, LDMOS | |
RF Power Transistor, 2.496 to 2.69 GHz, 140 W, 14.5 dB, 28 V, LDMOS, SOT1275-1 | |
RF Power Transistor, 2.496 to 2.690 GHz, 100 W, 15.5 dB, 28 V, SOT1275-1, LDMOS | |
RF Power Transistor, 2.496 to 2.690 GHz, 150 W, 15.5 dB, 28 V, SOT1275-3, LDMOS | |
RF Power Transistor, 2.496 to 2.690 GHz, 180 W, 14 dB, 28 V, SOT1275-3, LDMOS | |
RF Power Transistor, 2.496- 2.69 GHz, 160 W, 14.5 dB, 28 V, LDMOS, Assymetrical Doherty | |
RF Power Transistor, 2.5 to 2.7 GHz, 100 W, 16 dB, 28 V, LDMOS, SOT-502B | |
RF Power Transistor, 2.5 to 2.7 GHz, 140 W, 16.5 dB, 28 V, LDMOS, SOT-502B | |
RF Power Transistor, 2.5 to 2.7 GHz, 150 W, 16.5 dB, 28 V, LDMOS, SOT-539B | |
RF Power Transistor, 2.5 to 2.7 GHz, 200 W, 17 dB, 28 V, SOT1251-3, LDMOS | |
RF Power Transistor, 2.5 to 2.7 GHz, 40 W, 15.5 dB, 28 V, LDMOS, SOT-1121B | |
RF Power Transistor, 2.5 to 2.7 GHz, 40 W, 17.5 dB, 28 V, LDMOS, SOT1121E | |
RF Power Transistor, 2.5 to 2.7 GHz, 50 W, 16.5 dB, 28 V, LDMOS, SOT-1112A | |
RF Power Transistor, 2.5 to 2.7 GHz, 50 W, 16.5 dB, 28 V, LDMOS, SOT-1112B | |
RF Power Transistor, 2.5- 2.7 GHz, 240 W, 15.5 dB, 28 V, LDMOS | |
RF Power Transistor, 2.6 to 2.7 GHz, 135 W, 16.5 dB, 28 V, LDMOS, SOT-502A | |
RF Power Transistor, 2.6- 2.7 GHz, 200 W, 16.5 dB, 32 V, LDMOS | |
RF Power Transistor, 211 to 2.17 GHz, 270 W, 17.3 dB, 28 V, SOT1244C, LDMOS | |
RF Power Transistor, 2110 - 2170 MHz, 450W, 14 dB, SOT1258-1 | |
RF Power Transistor, 260 W, SOT1110A, LDMOS | |
RF Power Transistor, 3.4 to 3.6 GHz, 10 W, 14 dB, 28 V, LDMOS, SOT-975C | |
RF Power Transistor, 3.4 to 3.6 GHz, 25 W, 15 dB, 28 V, LDMOS, SOT-608B | |
RF Power Transistor, 3.4 to 3.6 GHz, 50 W, 14 dB, 28 V, LDMOS, SOT-502B | |
RF Power Transistor, 3.4 to 3.6 GHz, 50 W, 14 dB, 28 V, LDMOS, SOT502B | |
RF Power Transistor, 30 W, 2Ghz, 10dB Gain, 26 V | |
RF Power Transistor, 310W | |
RF Power Transistor, 400- 1000 MHz, 600 W, 19.8 dB, 50 V, LDMOS | |
RF Power Transistor, 4239P3 | |
RF Power Transistor, 4340P1 | |
RF Power Transistor, 4340P4 | |
RF Power Transistor, 450 MHz, 20 dB, 700 W, 50 V, LDMOS | |
RF Power Transistor, 470- 800 MHz, 600 W, 17 dB, LDMOS | |
RF Power Transistor, 5 to 230 MHz, 500 W, 26.5 dB, 50 V, LDMOS, Ruggedized, SOT1214A | |
RF Power Transistor, 5 to 230 MHz, 500 W, 26.5 dB, 50 V, LDMOS, Ruggedized | |
RF Power Transistor, 600 W, Push-Pull, Extremely Rugged | |
RF Power Transistor, 6753P1 | |
RF Power Transistor, 9632P1 | |
RF Power Transistor, HF to 1.3 GHz, 75 W, 23.5 dB, 32 V, LDMOS | |
RF Power Transistor, HF to 2.2 GHz, 10 W, 18.5 dB, 28 V, LDMOS | |
RF Power Transistor, HF to 600 MHz, 650 W, 23.5 dB, 50 V, LDMOS | |
RF Power Transistor, LDMOS, 1800 - 1990 MHz, 170 W, 18dB, SOT-1120B | |
RF Power Transistor, LDMOS, 1800 - 2000 MHz, 160W, 20dB, SOT-1239B | |
RF Power Transistor, LDMOS | |
RF Power Transistor, Matched Pair RF Power Transistors | |
RF Power Transistor, SOT502, LDMOS | |
RF Power Transistor, to GHz, 75 W Class A, 13 dB, 28 V | |
RF Power Transistor, UHF TV | |
RF Power Transistor, UHF, 10 W, 6 dB, 12.5 V, Land Mobile | |
RF Power Transistor, up to 0.175 GHz, 4 W, 12 dB, 12.5 V, BiPolar, Ceramic | |
RF Power Transistor, up to 0.175 GHz, 8 W, 28 V | |
RF Power Transistor, up to 0.225 GHz, 250 W, 16 dB, 50 V | |
RF Power Transistor, up to 1 GHz, 1 W, 7 dB, 28 V, BiPolar, Ceramic | |
RF Power Transistor, up to 4 GHz, 18 V, SOT122A | |
RF Power Transistor, VHF, 10 W, 12.5 V | |
RF Power Transistor, VHF, 100 W, 28 V | |
RF Power Transistor, VHF, 12 W, 12.5 V | |
RF Power Transistor, VHF, 25 W, 12.5 V | |
RF Power Transistor, VHF, 40 W, 12.5 V | |
RF Power Transistor,100 to 3600 MHz, 10 W, Typ Gain in dB is 21.7 @ 2170 MHz, 28 V, LDMOS, SOT1811 | |
RF Power Transistor,100 to 3600 MHz, 16.2 W, Typ Gain in dB is 17.6 @ 2170 MHz, 28 V, LDMOS, SOT1731 | |
RF Power Transistor,100 to 3600 MHz, 16.2 W, Typ Gain in dB is 17.6 @ 2170 MHz, 28 V, LDMOS, SOT1732 | |
RF Power Transistor,1200 to 1400 MHz, 1000 W, Typ Gain in dB is 17.7 @ 1400 MHz, 50 V, LDMOS, SOT1787 | |
RF Power Transistor,1200 to 1400 MHz, 1000 W, Typ Gain in dB is 17.7 @ 1400 MHz, 50 V, LDMOS, SOT1806 | |
RF Power Transistor,1200 to 1400 MHz, 1000 W, Typ Gain in dB is 17.7 @ 1400 MHz, 50 V, LDMOS, SOT1829 | |
RF Power Transistor,1800 to 2200 MHz, 125 W, Typ Gain in dB is 19.6 @ 2110 MHz, 48 V, GaN, SOT1828 | |
RF Power Transistor,1805 to 1880 MHz, 126 W, Typ Gain in dB is 17.9 @ 1805 MHz, 28 V, LDMOS, SOT1799 | |
RF Power Transistor,1805 to 1880 MHz, 199 W, Typ Gain in dB is 16.5 @ 1880 MHz, 30 V, LDMOS, SOT1795 | |
RF Power Transistor,1805 to 1880 MHz, 200 W, Typ Gain in dB is 17.5 @ 1805 MHz, 28 V, LDMOS, SOT1819 | |
RF Power Transistor,1805 to 1880 MHz, 204 W, Typ Gain in dB is 17.6 @ 1880 MHz, 28 V, LDMOS, SOT1818 | |
RF Power Transistor,1805 to 1880 MHz, 207 W, Typ Gain in dB is 19 @ 1880 MHz, 28 V, LDMOS, SOT1799 | |
RF Power Transistor,1805 to 1880 MHz, 280 W, Typ Gain in dB is 18.2 @ 1880 MHz, 28 V, LDMOS, | |
RF Power Transistor,1805 to 1880 MHz, 280 W, Typ Gain in dB is 18.7 @ 1880 MHz, 28 V, LDMOS, SOT1817 | |
RF Power Transistor,1805 to 1880 MHz, 316 W, Typ Gain in dB is 16.1 @ 1805 MHz, 28 V, LDMOS, SOT1800 | |
RF Power Transistor,1805 to 1880 MHz, 350 W, Typ Gain in dB is 15.2 @ 1880 MHz, 28 V, LDMOS, SOT1829 | |
RF Power Transistor,1805 to 1880 MHz, 355 W, Typ Gain in dB is 17.4 @ 1805 MHz, 28 V, LDMOS, SOT1800 | |
RF Power Transistor,1805 to 1880 MHz, 436 W, Typ Gain in dB is 15.9 @ 1880 MHz, 31.5 V, LDMOS, SOT1819 | |
RF Power Transistor,1805 to 1995 MHz, 129 W, Typ Gain in dB is 19.9 @ 1880 MHz, 28 V, LDMOS, SOT1785 | |
RF Power Transistor,1805 to 1995 MHz, 129 W, Typ Gain in dB is 19.9 @ 1880 MHz, 28 V, LDMOS, SOT1805 | |
RF Power Transistor,1805 to 1995 MHz, 148 W, Typ Gain in dB is 18 @ 1840 MHz, 28 V, LDMOS, SOT1785 | |
RF Power Transistor,1805 to 1995 MHz, 220 W, Typ Gain in dB is 17.3 @ 1805 MHz, 28 V, LDMOS, SOT1800 | |
RF Power Transistor,1805 to 1995 MHz, 257 W, Typ Gain in dB is 18.9 @ 1805 MHz, 28 V, LDMOS, SOT1785 | |
RF Power Transistor,1805 to 1995 MHz, 263 W, Typ Gain in dB is 18.2 @ 1960 MHz, 28 V, LDMOS, SOT1801 | |
RF Power Transistor,1805 to 1995 MHz, 400 W, Typ Gain in dB is 15 @ 1880 MHz, 28 V, LDMOS, SOT1800 | |
RF Power Transistor,1805 to 1995 MHz, 72 W, Typ Gain in dB is 18.1 @ 1805 MHz, 28 V, LDMOS, SOT1797 | |
RF Power Transistor,1805 to 2170 MHz, 60 W, Typ Gain in dB is 18.9 @ 2170 MHz, 28 V, LDMOS, SOT1818 | |
RF Power Transistor,1805 to 2170 MHz, 60 W, Typ Gain in dB is 18.9 @ 2170 MHz, 28 V, LDMOS, SOT1825 | |
RF Power Transistor,1805 to 2200 MHz, 158 W, Typ Gain in dB is 17.7 @ 2170 MHz, 48 V, GaN, SOT1828 | |
RF Power Transistor,1880 to 2025 MHz, 130 W, Typ Gain in dB is 17.6 @ 2025 MHz, 28 V, LDMOS, SOT1818 | |
RF Power Transistor,1880 to 2025 MHz, 130 W, Typ Gain in dB is 17.6 @ 2025 MHz, 28 V, LDMOS, SOT1825 | |
RF Power Transistor,1880 to 2025 MHz, 229 W, Typ Gain in dB is 15.9 @ 1880 MHz, 28 V, LDMOS, SOT1819 | |
RF Power Transistor,1880 to 2025 MHz, 240 W, Typ Gain in dB is 16.9 @ 1960 MHz, 28 V, LDMOS, SOT1800 | |
RF Power Transistor,1880 to 2025 MHz, 90 W, Typ Gain in dB is 17 @ 1960 MHz, 28 V, LDMOS, SOT1818 | |
RF Power Transistor,2110 to 2170 MHz, 110 W, Typ Gain in dB is 16.4 @ 2110 MHz, 28 V, LDMOS, SOT1806 | |
RF Power Transistor,2110 to 2170 MHz, 110 W, Typ Gain in dB is 16.4 @ 2110 MHz, 28 V, LDMOS, SOT1829 | |
RF Power Transistor,2110 to 2170 MHz, 112 W, Typ Gain in dB is 19.3 @ 2140 MHz, 28 V, LDMOS, SOT1793 | |
RF Power Transistor,2110 to 2170 MHz, 112 W, Typ Gain in dB is 19.3 @ 2140 MHz, 28 V, LDMOS, SOT1802 | |
RF Power Transistor,2110 to 2170 MHz, 182 W, Typ Gain in dB is 16.7 @ 2110 MHz, 28 V, LDMOS, SOT1785 | |
RF Power Transistor,2110 to 2170 MHz, 182 W, Typ Gain in dB is 16.7 @ 2110 MHz, 28 V, LDMOS, SOT1793 | |
RF Power Transistor,2110 to 2170 MHz, 182 W, Typ Gain in dB is 16.7 @ 2110 MHz, 28 V, LDMOS, SOT1799 | |
RF Power Transistor,2110 to 2170 MHz, 208 W, Typ Gain in dB is 18.7 @ 2170 MHz, 28 V, LDMOS, SOT1785 | |
RF Power Transistor,2110 to 2170 MHz, 209 W, Typ Gain in dB is 19.1 @ 2140 MHz, 28 V, LDMOS, SOT1793 | |
RF Power Transistor,2110 to 2170 MHz, 209 W, Typ Gain in dB is 19.1 @ 2140 MHz, 28 V, LDMOS, SOT1802 | |
RF Power Transistor,2110 to 2170 MHz, 230 W, Typ Gain in dB is 20.4 @ 2170 MHz, 28 V, LDMOS, SOT1786 | |
RF Power Transistor,2110 to 2170 MHz, 301 W, Typ Gain in dB is 16.2 @ 2140 MHz, 28 V, LDMOS, SOT1800 | |
RF Power Transistor,2110 to 2170 MHz, 316 W, Typ Gain in dB is 15.6 @ 2170 MHz, 28 V, LDMOS, SOT1800 | |
RF Power Transistor,2110 to 2170 MHz, 75 W, Typ Gain in dB is 17.4 @ 2170 MHz, 28 V, LDMOS, SOT1797 | |
RF Power Transistor,2110 to 2200 MHz, 229 W, Typ Gain in dB is 16.8 @ 2140 MHz, 28 V, LDMOS, | |
RF Power Transistor,2110 to 2200 MHz, 390 W, Typ Gain in dB is 15.7 @ 2110 MHz, 30 V, LDMOS, SOT1795 | |
RF Power Transistor,2300 to 2400 MHz, 114 W, Typ Gain in dB is 16.7 @ 2300 MHz, 28 V, LDMOS, SOT1798 | |
RF Power Transistor,2300 to 2400 MHz, 120 W, Typ Gain in dB is 17.7 @ 2300 MHz, 28 V, LDMOS, SOT1799 | |
RF Power Transistor,2300 to 2400 MHz, 147 W, Typ Gain in dB is 18.8 @ 2400 MHz, 28 V, LDMOS, SOT1799 | |
RF Power Transistor,2300 to 2400 MHz, 210 W, Typ Gain in dB is 15.3 @ 2300 MHz, 28 V, LDMOS, SOT1800 | |
RF Power Transistor,2300 to 2400 MHz, 210 W, Typ Gain in dB is 15.6 @ 2300 MHz, 28 V, LDMOS, SOT1800 | |
RF Power Transistor,2300 to 2400 MHz, 275 W, Typ Gain in dB is 14.9 @ 2300 MHz, 28 V, LDMOS, SOT1800 | |
RF Power Transistor,2496 to 2690 MHz, - W, Typ Gain in dB is 14.3 @ 2635 MHz, 48 V, GaN, SOT1826 | |
RF Power Transistor,2496 to 2690 MHz, 100 W, Typ Gain in dB is 14.9 @ 2496 MHz, 28 V, LDMOS, SOT1798 | |
RF Power Transistor,2496 to 2690 MHz, 138 W, Typ Gain in dB is 16.4 @ 2690 MHz, 28 V, LDMOS, SOT1799 | |
RF Power Transistor,2496 to 2690 MHz, 141 W, Typ Gain in dB is 14.7 @ 2496 MHz, 28 V, LDMOS, SOT1799 | |
RF Power Transistor,2496 to 2690 MHz, 200 W, Typ Gain in dB is 14.1 @ 2496 MHz, 28 V, LDMOS, SOT1829 | |
RF Power Transistor,2496 to 2690 MHz, 209 W, Typ Gain in dB is 14.5 @ 2496 MHz, 28 V, LDMOS, SOT1800 | |
RF Power Transistor,2496 to 2690 MHz, 230 W, Typ Gain in dB is 14.1 @ 2496 MHz, 28 V, LDMOS, SOT1800 | |
RF Power Transistor,2496 to 2690 MHz, 230 W, Typ Gain in dB is 14.1 @ 2496 MHz, 28 V, LDMOS, SOT1829 | |
RF Power Transistor,2496 to 2690 MHz, 42 W, Typ Gain in dB is 14.2 @ 2690 MHz, 28 V, LDMOS, SOT1797 | |
RF Power Transistor,2496 to 2690 MHz, 42 W, Typ Gain in dB is 14.2 @ 2690 MHz, 28 V, LDMOS, SOT1809 | |
RF Power Transistor,2496 to 2690 MHz, 87 W, Typ Gain in dB is 15.3 @ 2690 MHz, 28 V, LDMOS, SOT1805 | |
RF Power Transistor,2496 to 2690 MHz, 87 W, Typ Gain in dB is 15.3 @ 2690 MHz, 28 V, LDMOS, SOT1826 | |
RF Power Transistor,3400 to 3600 MHz, 126 W, Typ Gain in dB is 15.7 @ 3500 MHz, 48 V, GaN, SOT1828 | |
RF Power Transistor,3400 to 3600 MHz, 180 W, Typ Gain in dB is 16.1 @ 3500 MHz, 48 V, GaN, SOT1828 | |
RF Power Transistor,716 to 960 MHz, 126 W, Typ Gain in dB is 18.9 @ 865 MHz, 28 V, LDMOS, SOT1800 | |
RF Power Transistor,716 to 960 MHz, 200 W, Typ Gain in dB is 19.2 @ 960 MHz, 28 V, LDMOS, SOT1815 | |
RF Power Transistor,716 to 960 MHz, 200 W, Typ Gain in dB is 19.2 @ 960 MHz, 28 V, LDMOS, SOT1823 | |
RF Power Transistor,716 to 960 MHz, 250 W, Typ Gain in dB is 21.5 @ 920 MHz, 48 V, LDMOS, SOT1740 | |
RF Power Transistor,716 to 960 MHz, 400 W, Typ Gain in dB is 17.9 @ 836 MHz, 28 V, LDMOS, SOT1819 | |
RF Power Transistor,716 to 960 MHz, 79 W, Typ Gain in dB is 21.5 @ 803 MHz, 28 V, LDMOS, SOT1826 | |
RF Power Transistor,720 to 960 MHz, - W, Typ Gain in dB is 18 @ 780 MHz, 48 V, LDMOS, | |
RF Power Transistor,720 to 960 MHz, 200 W, Typ Gain in dB is 19.5 @ 920 MHz, 48 V, LDMOS, SOT1818 | |
RF Power Transistor,720 to 960 MHz, 200 W, Typ Gain in dB is 19.5 @ 920 MHz, 48 V, LDMOS, SOT1825 | |
RF Power Transistor,720 to 960 MHz, 223 W, Typ Gain in dB is 19.7 @ 940 MHz, 48 V, LDMOS, SOT1818 | |
RF Power Transistor,720 to 960 MHz, 280 W, Typ Gain in dB is 20 @ 960 MHz, 28 V, LDMOS, SOT1823 | |
RF Power Transistor,728 to 960 MHz, 18.6 W, Typ Gain in dB is 19.1 @ 960 MHz, 48 V, LDMOS, SOT1664 | |
RF Power Transistor,850 to 960 MHz, 220 W, Typ Gain in dB is 19.5 @ 920 MHz, 28 V, LDMOS, SOT1823 | |
RF Power Transistor,920 to 960 MHz, 148 W, Typ Gain in dB is 19.4 @ 960 MHz, 28 V, LDMOS, SOT1793 | |
RF Power Transistor,920 to 960 MHz, 180 W, Typ Gain in dB is 17.9 @ 920 MHz, 28 V, LDMOS, SOT1806 | |
RF Power Transistor,920 to 960 MHz, 180 W, Typ Gain in dB is 17.9 @ 920 MHz, 28 V, LDMOS, SOT1829 | |
RF Power Transistor,960 to 1215 MHz, 1000 W, Typ Gain in dB is 17.4 @ 1090 MHz, 50 V, LDMOS, SOT1787 | |
RF Power Transistor,960 to 1215 MHz, 1000 W, Typ Gain in dB is 17.4 @ 1090 MHz, 50 V, LDMOS, SOT1806 | |
RF Power Transistor,960 to 1215 MHz, 1000 W, Typ Gain in dB is 17.4 @ 1090 MHz, 50 V, LDMOS, SOT1829 | |
RF Power Transistor. 0.01 to 0.60 GHz, 700 W, 23.9 dB, Rugged, LDMOS, SOT1214C | |
RF Power Transistor. 2.3 to 2.4 GHz, 100 W, 18 dB, 28 V, SOT502B, LDMOS | |
RF Power Transistor | |
RF Transistor, 8.5 GHz, 13 dB, Silicon, SOT223 | |
RF Transistor, NPN, 2 GHz, 12 V, Silicon, SOT23 | |
RF Transistor, Transition Freq 90 GHz, 3V, 0.65 dB NF, 2 dBm, SOT343F, SiGe | |
RFPower Transistor, 4242P3 | |
The NXP BFU725F/N1 NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package. Low noise high gain microwave transistor Noise figure (NF)... | |
The NXP BFU730F NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package. Low noise high gain microwave transistor Noise figure (NF)... | |
Transistor, 0 to 2 GHz, 10 dBm, 18 dB, 24V, SOT23, Silicon | |
Transistor, Microwave,3 GHz, 1 W, .230FL | |
Transistor, RF Power, 100-200 MHz, 80 W, 28 V | |
Transistor, RF Power, 2 W, 400 MHz, 10 dB, 28 V | |
Transistor, RF Power, 2 Watts, 400 MHz, 1GHz, 28 V | |
Transistor, RF Power, 400 MHz, 4W, 28V, .280ST Package | |
Transistor, RF Power, HF to 500 MHz, 1200 W, 24 dB, 50V Ruggedized version | |
Transistor, RF, Wideband | |
Transistor | |
Transistors | |
Untitled 1 Ampleon's BLA6H0912L-1000, 1000 W LDMOS pulsed power transistor is intended for avionics transmitter applications in the 960 MHz to 1215 MHz frequency range. Features and benefits Easy power... | |
Untitled 1 Ampleon's BLA6H0912LS-1000, 1000 W LDMOS pulsed power transistor is intended for avionics transmitter applications in the 960 MHz to 1215 MHz frequency range. Features and benefits Easy power... |
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