Insulated Gate Bipolar Transistors (IGBT) from RS Components, Ltd.

1248992


 
 
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Isolated Gate Bipolar Transistors (IGBT) from Infineon provide the iser with a comprehensive range of options to ensure your appplication is covered. High effiency ratings enable this range of IGBTs to be used in a wide variety of applications and can support various switching frequencies thanks to low switching losses.
IGBT co-packaged with ultrafast soft recovery anti-parallel diode for use in bridge configurations
Maximum Continuous Collector Current = 75 A
Maximum Collector Emitter Voltage = 600 V
Maximum Gate Emitter Voltage = ±20V
Package Type = TO-247AC
Mounting Type = Through Hole
Channel Type = N
Pin Count = 3
Transistor Configuration = Single
Length = 15.9mm
Width = 5.3mm


Specifications

Manufacturer
Infineon Technologies AG
Manufacturer Part Number
IRGP50B60PD1PBF
Product Category
Insulated Gate Bipolar Transistors (IGBT)
Polarity
N-Channel
IC(max)
 
Package Type
 
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