Insulated Gate Bipolar Transistors (IGBT) from RS Components, Ltd.

1453409


 
 
1453409 -- View Larger Image
1453409-Image

Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.
Maximum Continuous Collector Current = 60 A
Maximum Collector Emitter Voltage = 1350 V
Maximum Gate Emitter Voltage = ±20V
Maximum Power Dissipation = 394 W
Package Type = TO-247
Mounting Type = Through Hole
Channel Type = N
Pin Count = 3
Switching Speed = 1MHz
Transistor Configuration = Single


Specifications

Manufacturer
ON Semiconductor L.L.C.
Manufacturer Part Number
NGTB30N135IHRWG
Product Category
Insulated Gate Bipolar Transistors (IGBT)
Polarity
N-Channel
IC(max)
 
PD
 
Package Type
 
Similar Products
RS Components, Ltd.
RS Components, Ltd.
RS Components, Ltd.
RS Components, Ltd.