A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStopâ„¢ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.
â€¢ Collector-emitter voltage range 600 to 650V. â€¢ Very low VCEsat. â€¢ Low turn-off losses. â€¢ Short tail current. â€¢ Low EMI. â€¢ Maximum junction temperature 175°C
Maximum Continuous Collector Current = 30 A
Maximum Collector Emitter Voltage = 650 V
Maximum Gate Emitter Voltage = ±20V
Maximum Power Dissipation = 105 W
Package Type = TO-220
Mounting Type = Through Hole
Channel Type = N
Pin Count = 3
Transistor Configuration = Single
Length = 10.36mm
Delivery on production packaging - Tube. This product is non-returnable.