Insulated Gate Bipolar Transistors (IGBT) from RS Components, Ltd.


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The Infineon range of IGBT Modules offer low switching loss for switching up to 60 Khz frequencies. The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, PrimePACK IGBT half-bridge chopper modules with NTC up to 1600/1700V. The PrimePACK IGBT’s can be found in Industrial, commercial, construction and agricultural vehicles. The N-Channel TRENCHSTOP ^TM and Fieldstop IGBT Modules are suitable for hard switching and soft switching applications such as Inverters, UPS and Industrial drives.
Package styles include: 62mm Modules, EasyPACK, EconoPACK^TM2/EconoPACK^TM3/EconoPACK^TM4
Configuration = Series
Transistor Configuration = Series
Maximum Continuous Collector Current = 995 A
Maximum Collector Emitter Voltage = 1200 V
Maximum Gate Emitter Voltage = ±20V
Channel Type = N
Mounting Type = Panel Mount
Package Type = AG-ECONOD-3
Maximum Power Dissipation = 4.05 kW
Dimensions = 152.1 x 62 x 17mm


Infineon Technologies AG
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Insulated Gate Bipolar Transistors (IGBT)
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