You have successfully added from to your part list.
Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.
Maximum Continuous Collector Current = 100 A
Maximum Collector Emitter Voltage = 650 V
Maximum Gate Emitter Voltage = ±20 V, ±30 V
Maximum Power Dissipation = 595 W
Package Type = TO-247
Mounting Type = Through Hole
Channel Type = N
Pin Count = 3
Transistor Configuration = Single
Length = 16.26mm
Delivery on production packaging - Tube. This product is non-returnable.