Insulated Gate Bipolar Transistors (IGBT) from RS Components, Ltd.


1251109 -- View Larger Image

Compact modules containing six high power IGBT devices suitable for 3-phase power switching applications.
Compact low-profile single screw fixing module. Direct copper-bonded aluminium oxide ceramic provides excellent heat transfer and isolation. N-channel non-punch-trough IGBTs with high short-circuit current capability
Configuration = Hex
Transistor Configuration = Six Pack
Maximum Continuous Collector Current = 45 A
Maximum Collector Emitter Voltage = 600 V
Maximum Gate Emitter Voltage = 20V
Number of Transistors = 6
Channel Type = N
Mounting Type = Through Hole
Package Type = SEMITOP3
Pin Count = 36

Semikron, Inc.
Manufacturer Part Number
Product Category
Insulated Gate Bipolar Transistors (IGBT)

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IGBT Performance
Packaging Characteristics
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