Insulated Gate Bipolar Transistors (IGBT) from RS Components, Ltd.


1107741 -- View Larger Image

A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStopâ„¢ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.
• Collector-emitter voltage range 600 to 650V. • Very low VCEsat. • Low turn-off losses. • Short tail current. • Low EMI. • Maximum junction temperature 175°C
Maximum Continuous Collector Current = 90 A
Maximum Collector Emitter Voltage = 600 V
Maximum Gate Emitter Voltage = ±20V
Maximum Power Dissipation = 333 W
Package Type = TO-247
Mounting Type = Through Hole
Channel Type = N
Pin Count = 3
Transistor Configuration = Single
Length = 16.13mm

Infineon Technologies AG
Manufacturer Part Number
Product Category
Insulated Gate Bipolar Transistors (IGBT)

View Entire Datasheet

To view all product specifications available in these tables, click on the "View Entire Datasheet" button.

View Entire Datasheet
IGBT Performance
Packaging Characteristics
Package Type

Similar Products
RS Components, Ltd.
RS Components, Ltd.
RS Components, Ltd.