Insulated Gate Bipolar Transistors (IGBT) from RS Components, Ltd.

1245386


 
 
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Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.
Maximum Continuous Collector Current = 60 A
Maximum Collector Emitter Voltage = 1200 V
Maximum Gate Emitter Voltage = ±20V
Number of Transistors = 1
Maximum Power Dissipation = 260 W
Package Type = TO-247
Mounting Type = Through Hole
Channel Type = N
Pin Count = 3
Transistor Configuration = Single



Manufacturer
ON Semiconductor L.L.C.
Manufacturer Part Number
NGTB30N120LWG
Product Category
Insulated Gate Bipolar Transistors (IGBT)
Polarity
N-Channel

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IGBT Performance
IC(max)
 
PD
 
Packaging Characteristics
Package Type
 

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