Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.
Maximum Continuous Collector Current = 100 A
Maximum Collector Emitter Voltage = 1200 V
Maximum Gate Emitter Voltage = ±20V
Maximum Power Dissipation = 349 W
Package Type = TO-247
Mounting Type = Through Hole
Channel Type = N
Pin Count = 3
Switching Speed = 1MHz
Transistor Configuration = Single
Delivery on production packaging - Tube. This product is non-returnable.