Insulated Gate Bipolar Transistors (IGBT) from RS Components, Ltd.

1220393


 
 
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1220393-Image

Dual IGBT Modules from Semikron in modern low-profile SEMiX® packages suitable for half-bridge power control applications. The modules use solder-free spring or press-fit contacts to allow for a gate driver mounted directly on top of the module, saving space and offering greater connection reliability. Typical applications include AC inverter drives, UPS, Electronic Welding and Renewable Energy Systems. For suitable press-fit gate driver modules see 122-0385 to 122-0387
• Low profile solder-free mounting package. • Trenchgate technology IGBTs. • VCE(sat) has positive temperature coefficient. • High short circuit current capability. • Press-fit pins as auxiliary contacts. • UL recognized
Configuration = Series
Transistor Configuration = Series
Maximum Continuous Collector Current = 1100 A
Maximum Collector Emitter Voltage = 1200 V
Maximum Gate Emitter Voltage = 20V
Channel Type = N
Mounting Type = Through Hole
Package Type = SEMiX®3p
Pin Count = 11
Dimensions = 150 x 62.4 x 17mm



Manufacturer
Semikron, Inc.
Manufacturer Part Number
SEMiX603GB12E4p
Product Category
Insulated Gate Bipolar Transistors (IGBT)
Polarity
N-Channel

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IGBT Performance
IC(max)
 
Packaging Characteristics
Package Type
 

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