Insulated Gate Bipolar Transistors (IGBT) from RS Components, Ltd.

8640937


 
 
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Optimised IGBTs designed for medium frequency applications with fast response and provide the user with the highest efficiency available. Utilising FRED diodes optimised to provide the best performance with IGBTs
Maximum Continuous Collector Current = 23.5 A
Maximum Collector Emitter Voltage = 600 V
Maximum Gate Emitter Voltage = ±20V
Maximum Power Dissipation = 45 W
Package Type = TO-220FP
Mounting Type = Through Hole
Channel Type = N
Pin Count = 3
Switching Speed = 1kHz
Transistor Configuration = Single



Manufacturer
Infineon Technologies AG
Manufacturer Part Number
IRG4IBC30SPBF
Product Category
Insulated Gate Bipolar Transistors (IGBT)
Polarity
N-Channel

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IGBT Performance
IC(max)
 
PD
 
Packaging Characteristics
Package Type
 

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