Insulated Gate Bipolar Transistors (IGBT) from RS Components, Ltd.

1109128


 
 
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V-Series, 6th Generation Field-Stop. U/U4 Series, 5th Generation Field-Stop. S-Series, 4th Generation NPT
Transistor Configuration = 3 Phase
Configuration = 3 Phase Bridge
Maximum Continuous Collector Current = 75 A
Maximum Collector Emitter Voltage = 1200 V
Maximum Gate Emitter Voltage = ±20V
Channel Type = N
Mounting Type = Through Hole
Package Type = M636
Pin Count = 28
Maximum Power Dissipation = 385 W



Manufacturer
Fuji Electric Global
Manufacturer Part Number
6MBI75VA-120-50
Product Category
Insulated Gate Bipolar Transistors (IGBT)
Polarity
N-Channel

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IGBT Performance
IC(max)
 
PD
 
Packaging Characteristics
Package Type
 

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