Insulated Gate Bipolar Transistors (IGBT) from RS Components, Ltd.

1241447


 
 
1241447 -- View Larger Image
1241447-Image

A range of Field Stop Trench IGBTs from Fairchild Semiconductor that have been stress tested and meet the AEC-Q101 standard.
• Positive temperaure co-efficient for easy parallel operation. • High current capability. • Low saturation voltage. • High input impedance. • Tightened parameter distribution
864-8792 FGB20N60SFD_F085 IGBT 600V 20A D2PAK-2. 864-8852 FGH40N60SMD_F085 IGBT 600V 40A TO247. 864-8877 FGH60N60SMD_F085 IGBT 600V 60A TO247. 135-8687 FGB40T65SPD_F085 IGBT 650V 40A TO263. 135-8663 FGB40T65SPD_F085 IGBT 650V 40A TO263 (Pack of 800). 864-8871 FGH75T65UPD_F085 IGBT 650V 75A TO247. 124-1447 FGH75T65UPD_F085 IGBT 650V 75A TO247 (Pack of 30)
Maximum Continuous Collector Current = 150 A
Maximum Collector Emitter Voltage = 650 V
Maximum Gate Emitter Voltage = ±20V
Maximum Power Dissipation = 375 W
Package Type = TO-247
Mounting Type = Through Hole
Channel Type = N
Pin Count = 3
Transistor Configuration = Single
Length = 15.6mm



Product Category
Insulated Gate Bipolar Transistors (IGBT)
Polarity
N-Channel

View Entire Datasheet

To view all product specifications available in these tables, click on the "View Entire Datasheet" button.

View Entire Datasheet
IGBT Performance
IC(max)
 
PD
 
Packaging Characteristics
Package Type
 

Similar Products
RS Components, Ltd.
RS Components, Ltd.
RS Components, Ltd.