Insulated Gate Bipolar Transistors (IGBT) from RS Components, Ltd.


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A range of Field Stop Trench IGBTs from Fairchild Semiconductor that have been stress tested and meet the AEC-Q101 standard.
• Positive temperaure co-efficient for easy parallel operation. • High current capability. • Low saturation voltage. • High input impedance. • Tightened parameter distribution
864-8792 FGB20N60SFD_F085 IGBT 600V 20A D2PAK-2. 864-8852 FGH40N60SMD_F085 IGBT 600V 40A TO247. 864-8877 FGH60N60SMD_F085 IGBT 600V 60A TO247. 135-8687 FGB40T65SPD_F085 IGBT 650V 40A TO263. 135-8663 FGB40T65SPD_F085 IGBT 650V 40A TO263 (Pack of 800). 864-8871 FGH75T65UPD_F085 IGBT 650V 75A TO247. 124-1447 FGH75T65UPD_F085 IGBT 650V 75A TO247 (Pack of 30)
Maximum Continuous Collector Current = 150 A
Maximum Collector Emitter Voltage = 650 V
Maximum Gate Emitter Voltage = ±20V
Maximum Power Dissipation = 375 W
Package Type = TO-247
Mounting Type = Through Hole
Channel Type = N
Pin Count = 3
Transistor Configuration = Single
Length = 15.6mm

Product Category
Insulated Gate Bipolar Transistors (IGBT)

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IGBT Performance
Packaging Characteristics
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