Insulated Gate Bipolar Transistors (IGBT) from RS Components, Ltd.

1109126


 
 
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1109126-Image

V-Series, 6th Generation Field-Stop. U/U4 Series, 5th Generation Field-Stop. S-Series, 4th Generation NPT
Configuration = 3 Phase Bridge
Transistor Configuration = 3 Phase
Maximum Continuous Collector Current = 50 A
Maximum Collector Emitter Voltage = 600 V
Maximum Gate Emitter Voltage = ±20V
Channel Type = N
Mounting Type = Through Hole
Package Type = M636
Pin Count = 28
Maximum Power Dissipation = 200 W


Specifications

Manufacturer
Fuji Electric Global
Manufacturer Part Number
6MBI50VA-060-50
Product Category
Insulated Gate Bipolar Transistors (IGBT)
Polarity
N-Channel
IC(max)
 
PD
 
Package Type
 
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