Insulated Gate Bipolar Transistors (IGBT) from RS Components, Ltd.

1441203


 
 
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1441203-Image

A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStopâ„¢ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.
• Collector-emitter voltage range 600 to 650V. • Very low VCEsat. • Low turn-off losses. • Short tail current. • Low EMI. • Maximum junction temperature 175°C
Maximum Continuous Collector Current = 80 A
Maximum Collector Emitter Voltage = 650 V
Maximum Gate Emitter Voltage = ±20 V, ±30 (Transient) V
Number of Transistors = 1
Maximum Power Dissipation = 395 W
Package Type = TO-247
Mounting Type = Through Hole
Channel Type = N
Pin Count = 3
Switching Speed = 30kHz



Manufacturer
Infineon Technologies AG
Manufacturer Part Number
IKW75N65ES5XKSA1
Product Category
Insulated Gate Bipolar Transistors (IGBT)
Polarity
N-Channel

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IGBT Performance
IC(max)
 
PD
 
Packaging Characteristics
Package Type
 

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