Insulated Gate Bipolar Transistors (IGBT) from RS Components, Ltd.


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Vishay’s high-efficiency IGBT modules come with a choice of PT, NPT, and Trench IGBT technologies. The range includes single switches, inverters, choppers, half-bridges, or in custom configurations. These IGBT Modules are designed to be used as a main switching device in switch mode power supplies, uninterruptible power supplies, industrial welding, motor drives, and power factor correction systems. Typical applications include boost and buck converters, forward and double forward converters, half bridges, full bridges (H-bridge), and three-phase bridges.
Wide range of industry-standard package styles . Direct mount on heat sink . Choice of PT, NPT, and Trench IGBT technologies . Low-VCE(on) IGBT . Switching frequency from 1 kHz to 150 kHz. Rugged transient performance. High isolation voltage up to 3500 V. 100 % lead (Pb)-free and RoHS-compliant. Low thermal resistance . Wide operating temperature range (-40 °C to +175 °C)
Transistor Configuration = Single
Configuration = Single
Maximum Continuous Collector Current = 184 A
Maximum Collector Emitter Voltage = 600 V
Maximum Gate Emitter Voltage = ±20V
Channel Type = N
Mounting Type = Panel Mount
Package Type = SOT-227
Pin Count = 4
Switching Speed = 30kHz


Vishay Precision Group
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Insulated Gate Bipolar Transistors (IGBT)
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