Insulated Gate Bipolar Transistors (IGBT) from RS Components, Ltd.

1220391


 
 
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Dual IGBT Modules from Semikron in modern low-profile SEMiX® packages suitable for half-bridge power control applications. The modules use solder-free spring or press-fit contacts to allow for a gate driver mounted directly on top of the module, saving space and offering greater connection reliability. Typical applications include AC inverter drives, UPS, Electronic Welding and Renewable Energy Systems. For suitable press-fit gate driver modules see 122-0385 to 122-0387
• Low profile solder-free mounting package. • Trenchgate technology IGBTs. • VCE(sat) has positive temperature coefficient. • High short circuit current capability. • Press-fit pins as auxiliary contacts. • UL recognized
Transistor Configuration = Series
Configuration = Series
Maximum Continuous Collector Current = 469 A
Maximum Collector Emitter Voltage = 1200 V
Maximum Gate Emitter Voltage = 20V
Channel Type = N
Mounting Type = Through Hole
Package Type = SEMiX®3p
Pin Count = 11
Dimensions = 150 x 62.4 x 17mm


Specifications

Manufacturer
Semikron, Inc.
Manufacturer Part Number
SEMiX303GB12E4p
Product Category
Insulated Gate Bipolar Transistors (IGBT)
Polarity
N-Channel
IC(max)
 
Package Type
 
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