Bipolar RF Transistors from RS Components, Ltd.

1107421


 
 
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A range of ultra-low-noise wideband NPN bipolar RF transistors from Infineon. These hetero-junction bipolar devices utilize Infineon’s silicon germanium carbon (SiGe:C) material technology and are especially suited for use mobile applications in which low power consumption is a key requirement. With typical transition frequencies of up to 65 GHz these devices offer high power gain at frequencies of up to 10 GHz when used in amplifier applications. The transistors include internal circuitry for ESD and excessive RF input power protection.
Transistor Type = NPN
Maximum DC Collector Current = 80 mA
Maximum Collector Emitter Voltage = 7.5 V
Package Type = TSFP
Mounting Type = Surface Mount
Maximum Power Dissipation = 185 mW
Minimum DC Current Gain = 110
Transistor Configuration = Single
Maximum Collector Base Voltage = 7.5 V
Maximum Emitter Base Voltage = 1.2 V


Specifications

Manufacturer
Infineon Technologies AG
Manufacturer Part Number
BFP 620F H7764
Product Category
Bipolar RF Transistors
Polarity
NPN
Package Type
TSFP
IC(max)
80 milliamps
VCEO
 
VCBO
 
PD
 
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