A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage NPN Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.
Transistor Type = NPN
Maximum DC Collector Current = 2 A
Maximum Collector Emitter Voltage = 40 V
Package Type = SSMini
Mounting Type = Surface Mount
Maximum Power Dissipation = 1.2 W
Minimum DC Current Gain = 75
Transistor Configuration = Single
Maximum Collector Base Voltage = 40 V
Maximum Emitter Base Voltage = 5 V
Delivery on production packaging - Reel. This product is non-returnable.