Bipolar RF Transistors from RS Components, Ltd.

1037567


 
 
1037567 -- View Larger Image
1037567-Image

A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage NPN Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.
Transistor Type = NPN
Maximum DC Collector Current = 4 A
Maximum Collector Emitter Voltage = 40 V
Package Type = UPAK
Mounting Type = Surface Mount
Maximum Power Dissipation = 2.5 W
Minimum DC Current Gain = 100
Transistor Configuration = Single
Maximum Collector Base Voltage = 40 V
Maximum Emitter Base Voltage = 6 V


Specifications

Product Category
Bipolar RF Transistors
Polarity
NPN
Package Type
UPAK
IC(max)
4000 milliamps
VCEO
 
VCBO
 
PD
 
Similar Products
RS Components, Ltd.
RS Components, Ltd.
RS Components, Ltd.
RS Components, Ltd.