Bipolar RF Transistors from RS Components, Ltd.

1000710


 
 
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1000710-Image

Five general purpose transistors which may be used as discrete transistors in conventional circuits, however, they provide the inherent integrated circuit advantages of close electrical and thermal matching for use in temperature compensated amplifiers.
5 NPN transistors on a common substrate, two connected internally as a differential pair. Two pairs have matched Vbe within ±5mV (typically ±0.5mV). Suitable for signal processing, switching systems etc. d.c. to 120 MHz
Transistor Type = NPN
Maximum DC Collector Current = 50 mA
Maximum Collector Emitter Voltage = 15 V
Package Type = SOIC
Mounting Type = Surface Mount
Maximum Power Dissipation = 750 mW
Minimum DC Current Gain = 40
Transistor Configuration = Complex
Maximum Collector Base Voltage = 20 V
Maximum Emitter Base Voltage = 5 V


Specifications

Manufacturer
Texas Instruments Standard Linear and Logic
Manufacturer Part Number
LM3046M/NOPB
Product Category
Bipolar RF Transistors
Polarity
NPN
Package Type
SOIC
IC(max)
50 milliamps
VCEO
 
VCBO
 
PD
 
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