Bipolar RF Transistors from RS Components, Ltd.
496745P




Complete isolation between transistors
Transistor Type = NPN
Maximum DC Collector Current = 65 mA
Maximum Collector Emitter Voltage = 8 V
Package Type = SOIC
Mounting Type = Surface Mount
Maximum Power Dissipation = 150 mW
Minimum DC Current Gain = 40
Transistor Configuration = Isolated
Maximum Collector Base Voltage = 12 V
Maximum Emitter Base Voltage = 5.5 V
Delivery on production packaging - Tube. This product is non-returnable.
Specifications
Manufacturer
Renesas Electronics Corporation
Manufacturer Part Number
HFA3127BZ
Product Category
Bipolar RF Transistors
Polarity
NPN
Package Type
SOIC
IC(max)
65 milliamps