Bipolar RF Transistors from RS Components, Ltd.

1037568


 
 
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1037568-Image

A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage PNP Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.
Transistor Type = PNP
Maximum DC Collector Current = 5 A
Maximum Collector Emitter Voltage = 20 V
Package Type = UPAK
Mounting Type = Surface Mount
Maximum Power Dissipation = 2.5 W
Minimum DC Current Gain = 250
Transistor Configuration = Single
Maximum Collector Base Voltage = 20 V
Maximum Emitter Base Voltage = 5 V


Specifications

Product Category
Bipolar RF Transistors
Polarity
PNP
Package Type
UPAK
IC(max)
5000 milliamps
VCEO
 
VCBO
 
PD
 
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