A range of ultra-low-noise wideband NPN bipolar RF transistors from Infineon. These hetero-junction bipolar devices utilize Infineonâ€™s silicon germanium carbon (SiGe:C) material technology and are especially suited for use mobile applications in which low power consumption is a key requirement. With typical transition frequencies of up to 65 GHz these devices offer high power gain at frequencies of up to 10 GHz when used in amplifier applications. The transistors include internal circuitry for ESD and excessive RF input power protection.
Transistor Type = NPN
Maximum DC Collector Current = 150 mA
Maximum Collector Emitter Voltage = 13 V
Package Type = SOT-343
Mounting Type = Surface Mount
Maximum Power Dissipation = 500 mW
Minimum DC Current Gain = 100
Transistor Configuration = Single
Maximum Collector Base Voltage = 13 V
Maximum Emitter Base Voltage = 1.2 V
Delivery on production packaging - Reel. This product is non-returnable.