onsemi Single Bipolar Transistors MJD50G

Description
TRANS NPN 400V 1A DPAK
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single Bipolar Transistors - MJD50GOS-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
MJD50GOS-ND
Single Bipolar Transistors MJD50GOS-ND
TRANS NPN 400V 1A DPAK

TRANS NPN 400V 1A DPAK

Supplier's Site Datasheet
TRANSISTORS - Transistors (BJT) - Single - MJD50G - 1223676-MJD50G - Win Source Electronics
Yishun, Singapore
TRANSISTORS - Transistors (BJT) - Single - MJD50G
1223676-MJD50G
TRANSISTORS - Transistors (BJT) - Single - MJD50G 1223676-MJD50G
Manufacturer: ON Semiconductor Win Source Part Number: 1223676-MJD50G Packaging: Tube Operating Temperature Range: -65°C ~ 150°C (TJ) Package: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting: SMD Power - Max: 1.56W Transistor Type: NPN Frequency - Transition: 10MHz Family Name: MJD50 Categories: Discrete Semiconductor Products Manufacturer Homepage: www.onsemi.com RoHS State: Request Verification Manufacturer Package: DPAK-3 Current - Collector (Ic) (Maximum): 1A Voltage - Collector Emitter Breakdown (Maximum): 400V Vce Saturation (Maximum) @ Ib, Ic: 1V @ 200mA, 1A Current - Collector Cutoff (Maximum): 200μA DC Current Gain (hFE) (Minimum) @ Ic, Vce: 30 @ 300mA, 10V Alternative Parts (Cross-Reference): MJD50T4; MJD50; NTE369; Introduction Date: August 31, 1995 ECCN: EAR99 Country of Origin: Malaysia Estimated EOL Date: 2023 Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Limited

Manufacturer: ON Semiconductor
Win Source Part Number: 1223676-MJD50G
Packaging: Tube
Operating Temperature Range: -65°C ~ 150°C (TJ)
Package: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting: SMD
Power - Max: 1.56W
Transistor Type: NPN
Frequency - Transition: 10MHz
Family Name: MJD50
Categories: Discrete Semiconductor Products
Manufacturer Homepage: www.onsemi.com
RoHS State: Request Verification
Manufacturer Package: DPAK-3
Current - Collector (Ic) (Maximum): 1A
Voltage - Collector Emitter Breakdown (Maximum): 400V
Vce Saturation (Maximum) @ Ib, Ic: 1V @ 200mA, 1A
Current - Collector Cutoff (Maximum): 200μA
DC Current Gain (hFE) (Minimum) @ Ic, Vce: 30 @ 300mA, 10V
Alternative Parts (Cross-Reference): MJD50T4; MJD50; NTE369;
Introduction Date: August 31, 1995
ECCN: EAR99
Country of Origin: Malaysia
Estimated EOL Date: 2023
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Limited

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - MJD50G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
MJD50G
Discrete Semiconductor Products - Transistors - Bipolar (BJT) MJD50G
TRANS NPN 400V 1A DPAK

TRANS NPN 400V 1A DPAK

Supplier's Site
 - 7905369P - RS Components, Ltd.
Corby, Northants, United Kingdom
NPN Power Transistor 400V 1A 15W DPAK - Discrete Semiconductors - Bipolar Transistors Delivery on production packaging - Tube. This product is non-returnable.

NPN Power Transistor 400V 1A 15W DPAK - Discrete Semiconductors - Bipolar Transistors
Delivery on production packaging - Tube. This product is non-returnable.

Supplier's Site
 - 7905369 - RS Components, Ltd.
Corby, Northants, United Kingdom
NPN Power Transistor 400V 1A 15W DPAK - Discrete Semiconductors - Bipolar Transistors

NPN Power Transistor 400V 1A 15W DPAK - Discrete Semiconductors - Bipolar Transistors

Supplier's Site
 - 1453572 - RS Components, Ltd.
Corby, Northants, United Kingdom
NPN Power Transistor 400V 1A 15W DPAK - Discrete Semiconductors - Bipolar Transistors

NPN Power Transistor 400V 1A 15W DPAK - Discrete Semiconductors - Bipolar Transistors

Supplier's Site
TRANS NPN 400V 1A DPAK - 598-MJD50G - Utmel Electronic Limited
Hong Kong, China
TRANS NPN 400V 1A DPAK
598-MJD50G
TRANS NPN 400V 1A DPAK 598-MJD50G
TRANS NPN 400V 1A DPAK

TRANS NPN 400V 1A DPAK

Supplier's Site
Bipolar (Bjt) Single Transistor, General Purpose, Npn, 400 V, 10 Mhz, 1.56 W, 1 A, 10 Rohs Compliant Onsemi - 38K5601 - Newark, An Avnet Company
Chicago, IL, United States
Bipolar (Bjt) Single Transistor, General Purpose, Npn, 400 V, 10 Mhz, 1.56 W, 1 A, 10 Rohs Compliant Onsemi
38K5601
Bipolar (Bjt) Single Transistor, General Purpose, Npn, 400 V, 10 Mhz, 1.56 W, 1 A, 10 Rohs Compliant Onsemi 38K5601
Bipolar (BJT) Single Transistor, GENERAL PURPOSE, NPN, 400 V, 10 MHz, 1.56 W, 1 A, 10 RoHS Compliant: Yes

Bipolar (BJT) Single Transistor, GENERAL PURPOSE, NPN, 400 V, 10 MHz, 1.56 W, 1 A, 10 RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited RS Components, Ltd. Utmel Electronic Limited Newark, An Avnet Company
Product Category Transistors RF Transistors Bipolar RF Transistors Bipolar RF Transistors Transistors Bipolar RF Transistors
Product Number MJD50GOS-ND 1223676-MJD50G MJD50G 7905369P 598-MJD50G 38K5601
Product Name Single Bipolar Transistors TRANSISTORS - Transistors (BJT) - Single - MJD50G Discrete Semiconductor Products - Transistors - Bipolar (BJT) TRANS NPN 400V 1A DPAK Bipolar (Bjt) Single Transistor, General Purpose, Npn, 400 V, 10 Mhz, 1.56 W, 1 A, 10 Rohs Compliant Onsemi
Polarity NPN NPN NPN NPN; NPN NPN
Package Type TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 SOT3; TO-252 (DPAK) DPAK (TO-252) TO-3
Packing Method Tube; Tube Tube; Tube
TJ -65 to 150 C (-85 to 302 F)
Power Gain 30 dB
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