A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage NPN Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.
Transistor Type = NPN
Maximum DC Collector Current = 1 A
Maximum Collector Emitter Voltage = 60 V
Package Type = UMT
Mounting Type = Surface Mount
Maximum Power Dissipation = 415 mW
Minimum DC Current Gain = 100
Transistor Configuration = Single
Maximum Collector Base Voltage = 80 V
Maximum Emitter Base Voltage = 5 V
A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage NPN Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.
Transistor Type = NPN
Maximum DC Collector Current = 1 A
Maximum Collector Emitter Voltage = 60 V
Package Type = UMT
Mounting Type = Surface Mount
Maximum Power Dissipation = 415 mW
Minimum DC Current Gain = 100
Transistor Configuration = Single
Maximum Collector Base Voltage = 80 V
Maximum Emitter Base Voltage = 5 V
Delivery on production packaging - Reel. This product is non-returnable.
| RS Components, Ltd. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 485420 |
| Polarity | NPN |
| Package Type | UMT |
| IC(max) | 1000 milliamps |
