A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage Dual NPN/PNP Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.
Transistor Type = NPN, PNP
Maximum DC Collector Current = 5.7 A
Maximum Collector Emitter Voltage = 30 V
Package Type = SOT-96
Mounting Type = Surface Mount
Maximum Power Dissipation = 2.3 W
Minimum DC Current Gain = 200 (PNP), 300 (NPN)
Transistor Configuration = Isolated
Maximum Collector Base Voltage = -30 V, 30 V
Maximum Emitter Base Voltage = 5 (NPN) V, -5 (PNP) V
Delivery on production packaging - Reel. This product is non-returnable.