The high power pulsed avionics transistor part number IB1011M70 is designed for L-Band avionics systems operating at 1030 and 1090 . While operating in class C mode under Mode S pulse burst conditions at VCC = 50V, this common base device supplies a minimum of 70 watts of peak pulse power. It utilizes a low loss internal input impedance matching structure to yield maximum device gain and to ease the implementation of external matching circuitry. The new generation bipolar transistor geometry utilizes a gold metallization system to achieve maximum reliability. Emitter ballast resistance is incorporated on the active cell for optimum thermal distribution and maximum reliability. All devices are 100% screened for large signal RF parameters.