onsemi Discrete Semiconductor Products - Transistors - Bipolar (BJT) 2N3904G

Description
TRANS NPN 40V 0.2A TO92
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Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - 2N3904G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
2N3904G
Discrete Semiconductor Products - Transistors - Bipolar (BJT) 2N3904G
TRANS NPN 40V 0.2A TO92

TRANS NPN 40V 0.2A TO92

Supplier's Site
Single Bipolar Transistors - 2N3904GOS-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
2N3904GOS-ND
Single Bipolar Transistors 2N3904GOS-ND
Bipolar (BJT) Transistor NPN 40V 200mA 300MHz 625mW Through Hole TO-92 (TO-226)

Bipolar (BJT) Transistor NPN 40V 200mA 300MHz 625mW Through Hole TO-92 (TO-226)

Supplier's Site Datasheet
TRANSISTORS - Transistors (BJT) - Single - 2N3904G - 038877-2N3904G - Win Source Electronics
Yishun, Singapore
TRANSISTORS - Transistors (BJT) - Single - 2N3904G
038877-2N3904G
TRANSISTORS - Transistors (BJT) - Single - 2N3904G 038877-2N3904G
Manufacturer: ON Semiconductor Win Source Part Number: 038877-2N3904G Packaging: Bulk Mounting: Through Hole Frequency - Transition: 300MHz Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-92-3 Maximum Current Collector: 200mA VCEO Maximum Collector-Emitter Breakdown Voltage: 40V Max Vce (sat): 300mV @ 5mA, 50mA Typical Gain (hFE) (Min): 100 @ 10mA, 1V Maximum Power Dissipation: 625mW Popularity: Medium Fake Threat In the Open Market: 67 pct. Supply and Demand Status: Limited

Manufacturer: ON Semiconductor
Win Source Part Number: 038877-2N3904G
Packaging: Bulk
Mounting: Through Hole
Frequency - Transition: 300MHz
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-92-3
Maximum Current Collector: 200mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 40V
Max Vce (sat): 300mV @ 5mA, 50mA
Typical Gain (hFE) (Min): 100 @ 10mA, 1V
Maximum Power Dissipation: 625mW
Popularity: Medium
Fake Threat In the Open Market: 67 pct.
Supply and Demand Status: Limited

Supplier's Site Datasheet
TRANSISTOR; TO-92; NPN; 40; 60; 6.0; 200 COLLECTOR; -55 TO +155; 40 VDC (MIN.) - 70099474 - Allied Electronics, Inc.
Fort Worth, TX, USA
TRANSISTOR; TO-92; NPN; 40; 60; 6.0; 200 COLLECTOR; -55 TO +155; 40 VDC (MIN.)
70099474
TRANSISTOR; TO-92; NPN; 40; 60; 6.0; 200 COLLECTOR; -55 TO +155; 40 VDC (MIN.) 70099474
TRANSISTOR; TO-92; NPN; 40; 60; 6.0; 200 COLLECTOR; -55 TO +155; 40 VDC (MIN.)

TRANSISTOR; TO-92; NPN; 40; 60; 6.0; 200 COLLECTOR; -55 TO +155; 40 VDC (MIN.)

Supplier's Site

Technical Specifications

  Shenzhen Shengyu Electronics Technology Limited DigiKey Win Source Electronics Allied Electronics, Inc.
Product Category Bipolar RF Transistors Transistors Transistors Bipolar RF Transistors
Product Number 2N3904G 2N3904GOS-ND 038877-2N3904G 70099474
Product Name Discrete Semiconductor Products - Transistors - Bipolar (BJT) Single Bipolar Transistors TRANSISTORS - Transistors (BJT) - Single - 2N3904G TRANSISTOR; TO-92; NPN; 40; 60; 6.0; 200 COLLECTOR; -55 TO +155; 40 VDC (MIN.)
Packing Method Bulk; Bulk
IC(max) 200 milliamps 200 milliamps
VCEO 40 volts 40 volts
Polarity NPN NPN; NPN NPN
Package Type TO-92; TO-226-3, TO-92-3 Long Body TO-92; SOT3; TO-92-3 TO-92
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