Newark, An Avnet Company Datasheets for Small-Signal Bipolar Transistors (BJT)

Small-signal bipolar transistors (BJT) are semiconductors that amplify small AC or DC signals. They consist of a base n-type or p-type layer sandwiched between emitter and collector layers of the opposite type.
Small-Signal Bipolar Transistors (BJT): Learn more

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Product Name Notes
88H4623 ; Collector Emitter Voltage V(br)ceo:50V; Base Input Resistor R1:2.2kohm; Base-Emitter Resistor R2:2.2kohm; Resistor Ratio, R1 / R2:1; RF Transistor Case:SC-75; Continuous Collector Current Max:100mA; Current Rating:100mA
29C4489 ; Current Rating:12A; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No; Voltage Rating:800V
29C5303 ; Current Rating:16A; Leaded Process Compatible:No; Package / Case:TO-3; Peak Reflow Compatible (260 C):No; Voltage Rating:250V
31C3289 ; Current Rating:30A; Leaded Process Compatible:No; Package / Case:TO-3; Peak Reflow Compatible (260 C):No; Voltage Rating:90V
29C4529 ; Current Rating:4A; Leaded Process Compatible:No; Package / Case:TO-220; Peak Reflow Compatible (260 C):No; Voltage Rating:130V
29C4450 ; Current Rating:500mA; Leaded Process Compatible:No; Package / Case:TO-126; Peak Reflow Compatible (260 C):No; Voltage Rating:300V
18C6291
33C5060
33C8239
33C8262
; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No
18C9184 ; No. of Pins:3; Current Rating:500A; Leaded Process Compatible:No; Package / Case:3-TO-92; Peak Reflow Compatible (260 C):No; Voltage Rating:60V
33C4417 ; Power Dissipation Pd:175W; DC Collector Current:1A; DC Current Gain hFE:300; C-E Breakdown Voltage:80V; DC Current Gain Min (hfe):25; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No; Power (Ptot):800mW
46T9296 ; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:100V; Power Dissipation Pd:125W; DC Collector Current:10A; DC Current Gain hFE:1000; Operating Temperature Range:-65°C to +150°C; No. of Pins:3
29C5288 ; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:100V; Power Dissipation Pd:65W; DC Collector Current:10A; DC Current Gain hFE:20000; No. of Pins:3; C-E Breakdown Voltage:100V; Current Rating:10A
46T9287 ; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:100V; Power Dissipation Pd:65W; DC Collector Current:5A; DC Current Gain hFE:1000; Operating Temperature Range:-65°C to +150°C; No. of Pins:3
46T9169 ; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:100V; Power Dissipation Pd:70W; DC Collector Current:10A; DC Current Gain hFE:750; Operating Temperature Range:-65°C to +150°C; No. of Pins:3
46T9293 ; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:100V; Power Dissipation Pd:70W; DC Collector Current:8A; DC Current Gain hFE:1000; Operating Temperature Range:-65°C to +150°C; No. of Pins:3
46T9278 ; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:100V; Power Dissipation Pd:80W; DC Collector Current:8A; DC Current Gain hFE:1; No. of Pins:3
46T9311 ; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:100V; Transition Frequency Typ ft:3MHz; Power Dissipation Pd:125W; DC Collector Current:25A; DC Current Gain hFE:15; Operating Temperature Range:-65°C to +150°C
46T9302 ; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:100V; Transition Frequency Typ ft:3MHz; Power Dissipation Pd:30W; DC Collector Current:1A; DC Current Gain hFE:15; Operating Temperature Range:-65°C to +150°C
46T9306 ; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:100V; Transition Frequency Typ ft:3MHz; Power Dissipation Pd:40W; DC Collector Current:3A; DC Current Gain hFE:10; Operating Temperature Range:-65°C to +150°C
46T9314 ; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:100V; Transition Frequency Typ ft:3MHz; Power Dissipation Pd:65W; DC Collector Current:6A; DC Current Gain hFE:30; No. of Pins:3
46T9336 ; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:100V; Transition Frequency Typ ft:4MHz; Power Dissipation Pd:150W; DC Collector Current:12A; DC Current Gain hFE:750; No. of Pins:2
24M7868 ; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:2.2kV; Power Dissipation Pd:166W; Continuous Collector Current Ic:3A; DC Current Gain Min (hfe):15; Package / Case:TO-247-4L
46T9198 ; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:200V; Transition Frequency Typ ft:10MHz; Power Dissipation Pd:60W; DC Collector Current:7A; DC Current Gain hFE:30; Operating Temperature Range:-65°C to +150°C
46T9317 ; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:250V; Transition Frequency Typ ft:10MHz; Power Dissipation Pd:40W; DC Collector Current:1A; DC Current Gain hFE:30; Operating Temperature Range:-65°C to +150°C
46T9264 ; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:300V; Power Dissipation Pd:20W; DC Collector Current:500mA; DC Current Gain hFE:30; Operating Temperature Range:-65°C to +150°C; No. of Pins:3
46T9193 ; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:400V; Power Dissipation Pd:175W; DC Collector Current:15A; No. of Pins:2
46T9318 ; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:400V; Transition Frequency Typ ft:10MHz; Power Dissipation Pd:400W; DC Collector Current:1A; DC Current Gain hFE:30; Operating Temperature Range:-65°C to +150°C
46T9191 ; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:450V; Power Dissipation Pd:150W; DC Collector Current:15A; Operating Temperature Range:-65°C to +175°C; No. of Pins:3
24M0844 ; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:450V; Power Dissipation Pd:175W; No. of Pins:2; Collector Base Voltage:1kV; Collector Current @ hfe:8mA; Collector Emitter Saturation Voltage Vce(sat):1.5V
46T9171 ; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:45V; Power Dissipation Pd:12.5mW; DC Collector Current:1A; DC Current Gain hFE:40; No. of Pins:3
46T9163 ; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:45V; Transition Frequency Typ ft:150MHz; Power Dissipation Pd:600mW; DC Collector Current:100mA; DC Current Gain hFE:110; Operating Temperature Range:-65°C to +200°C
46T9164 ; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:45V; Transition Frequency Typ ft:150MHz; Power Dissipation Pd:600mW; DC Collector Current:100mA; DC Current Gain hFE:200; Operating Temperature Range:-65°C to +200°C
46T9178 ; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:45V; Transition Frequency Typ ft:3MHz; Power Dissipation Pd:36W; DC Collector Current:4A; DC Current Gain hFE:85; Operating Temperature Range:-65°C to +150°C
26M3839 ; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:600V; Power Dissipation Pd:55W; Collector Current @ hfe:7A; Collector Emitter Saturation Voltage Vce(sat):3V; Continuous Collector Current Ic:12A
46T9281 ; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:60V; Power Dissipation Pd:50W; DC Collector Current:2A; DC Current Gain hFE:1000; Operating Temperature Range:-65°C to +150°C; No. of Pins:3
46T9285 ; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:60V; Power Dissipation Pd:65W; DC Collector Current:5A; DC Current Gain hFE:1000; Operating Temperature Range:-65°C to +150°C; No. of Pins:3
46T9329 ; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:60V; Transition Frequency Typ ft:0.2MHz; Power Dissipation Pd:150W; DC Collector Current:20A; DC Current Gain hFE:15; Operating Temperature Range:-65°C to +200°C
46T9327 ; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:60V; Transition Frequency Typ ft:2.5MHz; Power Dissipation Pd:115W; DC Collector Current:15A; DC Current Gain hFE:20; Operating Temperature Range:-65°C to +150°C
46T9263 ; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:60V; Transition Frequency Typ ft:2MHz; Power Dissipation Pd:75W; DC Collector Current:10A; DC Current Gain hFE:20; Operating Temperature Range:-55°C to +150°C
46T9301 ; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:60V; Transition Frequency Typ ft:3MHz; Power Dissipation Pd:30W; DC Collector Current:1A; DC Current Gain hFE:15; Operating Temperature Range:-65°C to +150°C
46T9305 ; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:60V; Transition Frequency Typ ft:3MHz; Power Dissipation Pd:40W; DC Collector Current:3A; DC Current Gain hFE:10; Operating Temperature Range:-65°C to +150°C
46T9313 ; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:60V; Transition Frequency Typ ft:3MHz; Power Dissipation Pd:65W; DC Collector Current:6A; DC Current Gain hFE:30; No. of Pins:3
46T9165 ; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:60V; Transition Frequency Typ ft:50MHz; Power Dissipation Pd:800mW; DC Collector Current:1A; DC Current Gain hFE:100; Operating Temperature Range:-65°C to +200°C
46T9270 ; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:80V; Power Dissipation Pd:150W; DC Collector Current:10A; DC Current Gain hFE:1000; No. of Pins:2
46T9340 ; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:80V; Power Dissipation Pd:65W; DC Collector Current:10A; DC Current Gain hFE:1000; Operating Temperature Range:-65°C to +150°C; No. of Pins:3
46T9286 ; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:80V; Power Dissipation Pd:65W; DC Collector Current:5A; DC Current Gain hFE:1000; Operating Temperature Range:-65°C to +150°C; No. of Pins:3
46T9245 ; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:80V; Transition Frequency Typ ft:15MHz; Power Dissipation Pd:50W; DC Collector Current:10A; DC Current Gain hFE:60; Operating Temperature Range:-55°C to +150°C
29C4434 ; Transistor Polarity:NPN; DC Collector Current:15A; DC Current Gain hFE:70; C-E Breakdown Voltage:60V; DC Current Gain Min (hfe):5; Leaded Process Compatible:No; Package / Case:TO-3; Peak Reflow Compatible (260 C):No
46T9295 ; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-100V; Power Dissipation Pd:70W; DC Collector Current:-8A; DC Current Gain hFE:1000; Operating Temperature Range:-65°C to +150°C; No. of Pins:3
78M7054 ; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-60V; Transition Frequency Typ ft:800kHz; Power Dissipation Pd:115W; DC Collector Current:-15A; DC Current Gain hFE:20; Operating Temperature Range:-65°C to +200°C
46T9299 ; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:100V; Power Dissipation Pd:125W; DC Collector Current:10A; DC Current Gain hFE:1000; Operating Temperature Range:-65°C to +150°C; No. of Pins:3
46T9284 ; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:100V; Power Dissipation Pd:50W; DC Collector Current:2A; DC Current Gain hFE:1000; No. of Pins:3
46T9291 ; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:100V; Power Dissipation Pd:65W; DC Collector Current:5A; DC Current Gain hFE:1000; Operating Temperature Range:-65°C to +150°C; No. of Pins:3
46T9167
46T9168
; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:100V; Power Dissipation Pd:80W; DC Collector Current:12A; DC Current Gain hFE:750; Operating Temperature Range:-65°C to +150°C; No. of Pins:3
46T9308 ; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:100V; Transition Frequency Typ ft:3MHz; Power Dissipation Pd:40W; DC Collector Current:3A; DC Current Gain hFE:10; Operating Temperature Range:-65°C to +150°C
46T9316 ; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:100V; Transition Frequency Typ ft:3MHz; Power Dissipation Pd:65W; DC Collector Current:6A; DC Current Gain hFE:30; No. of Pins:3
46T9265 ; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:300V; Power Dissipation Pd:20W; DC Collector Current:500mA; DC Current Gain hFE:30; Operating Temperature Range:-65°C to +150°C; No. of Pins:3
46T9298 ; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:60V; Power Dissipation Pd:125W; DC Collector Current:10A; DC Current Gain hFE:1000; Operating Temperature Range:-65°C to +150°C; No. of Pins:3
97K5119 ; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:60V; Power Dissipation Pd:300W; No. of Pins:2; Collector Base Voltage:60V; Collector Current @ hfe:25A; Collector Emitter Saturation Voltage Vce(sat):-2.5V
46T9283 ; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:60V; Power Dissipation Pd:50W; DC Collector Current:2A; DC Current Gain hFE:1000; Operating Temperature Range:-65°C to +150°C; No. of Pins:3
46T9289 ; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:60V; Power Dissipation Pd:65W; DC Collector Current:5A; DC Current Gain hFE:1000; Operating Temperature Range:-65°C to +150°C; No. of Pins:3
46T9303 ; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:60V; Transition Frequency Typ ft:2.5MHz; Power Dissipation Pd:90W; DC Collector Current:15A; DC Current Gain hFE:20; Operating Temperature Range:-65°C to +150°C
46T9307 ; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:60V; Transition Frequency Typ ft:3MHz; Power Dissipation Pd:40W; DC Collector Current:3A; DC Current Gain hFE:10; Operating Temperature Range:-65°C to +150°C
46T9315 ; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:60V; Transition Frequency Typ ft:3MHz; Power Dissipation Pd:65W; DC Collector Current:6A; DC Current Gain hFE:30; Operating Temperature Range:-65°C to +150°C
46T9173 ; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:80V; Power Dissipation Pd:12.5W; DC Collector Current:1.5A; DC Current Gain hFE:40; No. of Pins:3
46T9290 ; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:80V; Power Dissipation Pd:65W; DC Collector Current:5A; DC Current Gain hFE:1000; Operating Temperature Range:-65°C to +150°C; No. of Pins:3
A/D Converter (A-D) IC -- 09F6467 A/D Converter (A-D) IC; DC Current Gain hFE:60; No. of Pins:2; C-E Breakdown Voltage:850V; DC Current Gain Min (hfe):6; Mounting Type:Through Hole; Package / Case:2-TO-204AA
Amplifier Transistor -- 42K1514 Amplifier Transistor; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:80V; Power Dissipation Pd:625mW; DC Collector Current:500mA; DC Current Gain hFE:300; No. of Pins:3; C-E Breakdown Voltage:60V
AUDIO AMPLIFIER IC, NPN, 50V, TO-18 -- 89K0461 AUDIO AMPLIFIER IC, NPN, 50V, TO-18; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:45V; Power Dissipation Pd:300mW; DC Collector Current:100mA; DC Current Gain hFE:450; No. of Pins:3; Collector Current @ hfe:0.1µA
AUDIO BIPOLAR TRANSISTOR, PNP, -350V, TO-264 -- 26K4495 AUDIO BIPOLAR TRANSISTOR, PNP, -350V, TO-264; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:350V; Transition Frequency Typ ft:35MHz; Power Dissipation Pd:230W; DC Collector Current:-15A; DC Current Gain hFE:80
AUDIO BJT, NPN, THERMALTRAK, 260V, 15A, 200W, TO-264 -- 83K8663 AUDIO BJT, NPN, THERMALTRAK, 260V, 15A, 200W, TO-264; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:260VDC; Transition Frequency Typ ft:30MHz; Power Dissipation Pd:200W; DC Collector Current:15A; DC Current Gain hFE:150
AUDIO BJT, PNP, 250V, 16A, 200W, TO-247 -- 26K4501 AUDIO BJT, PNP, 250V, 16A, 200W, TO-247; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:250VDC; Transition Frequency Typ ft:4MHz; Power Dissipation Pd:200W; DC Collector Current:16A; DC Current Gain hFE:80
AUDIO BJT, PNP, THERMALTRAK, 260V, 15A, 200W, TO-264 -- 83K8662 AUDIO BJT, PNP, THERMALTRAK, 260V, 15A, 200W, TO-264; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:260VDC; Transition Frequency Typ ft:30MHz; Power Dissipation Pd:200W; DC Collector Current:15A; DC Current Gain hFE:150
AUDIO POWER TRANSISTOR, PNP, 80V, TO-66 -- 55R1311 AUDIO POWER TRANSISTOR, PNP, 80V, TO-66; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:80V; Transition Frequency Typ ft:3MHz; Power Dissipation Pd:25W; DC Collector Current:4A; DC Current Gain hFE:100
AUDIO TRANSISTOR, NPN, 250V -- 89M5494 AUDIO TRANSISTOR, NPN, 250V; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:250V; Transition Frequency Typ ft:30MHz; Power Dissipation Pd:200mW; DC Collector Current:15A; DC Current Gain hFE:75
AUDIO TRANSISTOR, NPN, 250V -- 89M5485 AUDIO TRANSISTOR, NPN, 250V; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:250V; Transition Frequency Typ ft:4MHz; Power Dissipation Pd:200mW; DC Collector Current:16A; DC Current Gain hFE:20
AUDIO TRANSISTOR, PNP, -250V -- 89M5483 AUDIO TRANSISTOR, PNP, -250V; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:250V; Transition Frequency Typ ft:4MHz; Power Dissipation Pd:200mW; DC Collector Current:-16A; DC Current Gain hFE:20
BIAS RESISTOR TRANSISTOR, NPN, 50V -- 88H4616 BIAS RESISTOR TRANSISTOR, NPN, 50V; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:10kohm; Base-Emitter Resistor R2:10kohm; Resistor Ratio, R1 / R2:1; No. of Pins:3
Bias Resistor Transistor -- 75C4471 Bias Resistor Transistor; Collector Emitter Voltage V(br)ceo:30V; Continuous Collector Current Ic:3A; Base Input Resistor R1:10kohm; RF Transistor Case:SOT-223; No. of Pins:3; Leaded Process Compatible:No; Package / Case:3-SOT-223
Bias Resistor Transistor -- 08F1954 Bias Resistor Transistor; Collector Emitter Voltage V(br)ceo:50V; Base Input Resistor R1:10kohm; Base-Emitter Resistor R2:10kohm; Resistor Ratio, R1 / R2:1; RF Transistor Case:SC-59; Continuous Collector Current Max:100mA
Bias Resistor Transistor -- 28C7545 Bias Resistor Transistor; Collector Emitter Voltage V(br)ceo:50V; Base Input Resistor R1:10kohm; Base-Emitter Resistor R2:10kohm; Resistor Ratio, R1 / R2:1; RF Transistor Case:SC-75; Continuous Collector Current Max:100mA
Bias Resistor Transistor -- 07F9281 Bias Resistor Transistor; Collector Emitter Voltage V(br)ceo:50V; Base Input Resistor R1:10kohm; Base-Emitter Resistor R2:10kohm; Resistor Ratio, R1 / R2:1; RF Transistor Case:SOT-23; No. of Pins:3
Bias Resistor Transistor -- 20C1242
Bias Resistor Transistor -- 20C1247
Bias Resistor Transistor; Collector Emitter Voltage V(br)ceo:50V; Base Input Resistor R1:10kohm; Base-Emitter Resistor R2:10kohm; Resistor Ratio, R1 / R2:1; RF Transistor Case:SOT-323; Continuous Collector Current Max:100mA
Bias Resistor Transistor -- 24C5470 Bias Resistor Transistor; Collector Emitter Voltage V(br)ceo:50V; Base Input Resistor R1:10kohm; Base-Emitter Resistor R2:47kohm; Resistor Ratio, R1 / R2:0.21; RF Transistor Case:SC-75; Continuous Collector Current Max:100mA
Bias Resistor Transistor -- 20C1251 Bias Resistor Transistor; Collector Emitter Voltage V(br)ceo:50V; Base Input Resistor R1:10kohm; Base-Emitter Resistor R2:47kohm; Resistor Ratio, R1 / R2:0.21; RF Transistor Case:SOT-323; Continuous Collector Current Max:100mA
Bias Resistor Transistor -- 20C1182 Bias Resistor Transistor; Collector Emitter Voltage V(br)ceo:50V; Base Input Resistor R1:10kohm; RF Transistor Case:SOT-23; No. of Pins:3; Continuous Collector Current Max:100mA; Current Rating:100mA; DC Current Gain Min (hfe):160
Bias Resistor Transistor -- 19C1486 Bias Resistor Transistor; Collector Emitter Voltage V(br)ceo:50V; Base Input Resistor R1:2.2kohm; Base-Emitter Resistor R2:2.2kohm; Resistor Ratio, R1 / R2:1; RF Transistor Case:SC-75; Continuous Collector Current Max:100mA
Bias Resistor Transistor -- 20C1184 Bias Resistor Transistor; Collector Emitter Voltage V(br)ceo:50V; Base Input Resistor R1:2.2kohm; Base-Emitter Resistor R2:2.2kohm; Resistor Ratio, R1 / R2:1; RF Transistor Case:SOT-23; No. of Pins:3
Bias Resistor Transistor -- 20C1246
Bias Resistor Transistor -- 20C1252
Bias Resistor Transistor; Collector Emitter Voltage V(br)ceo:50V; Base Input Resistor R1:2.2kohm; Base-Emitter Resistor R2:2.2kohm; Resistor Ratio, R1 / R2:1; RF Transistor Case:SOT-323; Continuous Collector Current Max:100mA
Bias Resistor Transistor -- 24C5455 Bias Resistor Transistor; Collector Emitter Voltage V(br)ceo:50V; Base Input Resistor R1:2.2kohm; Base-Emitter Resistor R2:2.2kohm; RF Transistor Case:SC-75; Continuous Collector Current Max:100mA; Current Rating:100mA
Bias Resistor Transistor -- 19C1510 Bias Resistor Transistor; Collector Emitter Voltage V(br)ceo:50V; Base Input Resistor R1:2.2kohm; Base-Emitter Resistor R2:4.7kohm; Resistor Ratio, R1 / R2:0.47; RF Transistor Case:SOT-323; Continuous Collector Current Max:100mA
Bias Resistor Transistor -- 24C5501 Bias Resistor Transistor; Collector Emitter Voltage V(br)ceo:50V; Base Input Resistor R1:2.2kohm; Base-Emitter Resistor R2:47kohm; Resistor Ratio, R1 / R2:0.047; RF Transistor Case:SOT-323; Continuous Collector Current Max:100mA
Bias Resistor Transistor -- 24C5456 Bias Resistor Transistor; Collector Emitter Voltage V(br)ceo:50V; Base Input Resistor R1:2.2kohm; Base-Emitter Resistor R2:47kohm; RF Transistor Case:SC-75; Continuous Collector Current Max:100mA; Current Rating:100mA
Bias Resistor Transistor -- 19C1487
Bias Resistor Transistor -- 19C1488
Bias Resistor Transistor; Collector Emitter Voltage V(br)ceo:50V; Base Input Resistor R1:22kohm; Base-Emitter Resistor R2:22kohm; Resistor Ratio, R1 / R2:1; RF Transistor Case:SC-75; Continuous Collector Current Max:100mA
Bias Resistor Transistor -- 20C1244
Bias Resistor Transistor -- 20C1249
Bias Resistor Transistor -- 67H6953
Bias Resistor Transistor; Collector Emitter Voltage V(br)ceo:50V; Base Input Resistor R1:22kohm; Base-Emitter Resistor R2:22kohm; Resistor Ratio, R1 / R2:1; RF Transistor Case:SOT-323; Continuous Collector Current Max:100mA
Bias Resistor Transistor -- 20C1248
Bias Resistor Transistor -- 20C1255
Bias Resistor Transistor; Collector Emitter Voltage V(br)ceo:50V; Base Input Resistor R1:22kohm; Base-Emitter Resistor R2:22kohm; Resistor Ratio, R1 / R2:1; RF Transistor Case:SOT-363; Continuous Collector Current Max:100mA
Bias Resistor Transistor -- 20C1243 Bias Resistor Transistor; Collector Emitter Voltage V(br)ceo:50V; Base Input Resistor R1:22kohm; Base-Emitter Resistor R2:22kohm; Resistor Ratio, R1 / R2:1; RF Transistor Case:SOT-363; No. of Pins:6
Bias Resistor Transistor -- 24C5458 Bias Resistor Transistor; Collector Emitter Voltage V(br)ceo:50V; Base Input Resistor R1:22kohm; Base-Emitter Resistor R2:22kohm; RF Transistor Case:SC-75; Continuous Collector Current Max:100mA; Current Rating:100mA
Bias Resistor Transistor -- 20C1241 Bias Resistor Transistor; Collector Emitter Voltage V(br)ceo:50V; Base Input Resistor R1:22kohm; Base-Emitter Resistor R2:47kohm; Resistor Ratio, R1 / R2:0.47; RF Transistor Case:SC-59; Continuous Collector Current Max:100mA
Bias Resistor Transistor -- 24C5459 Bias Resistor Transistor; Collector Emitter Voltage V(br)ceo:50V; Base Input Resistor R1:22kohm; Base-Emitter Resistor R2:47kohm; RF Transistor Case:SC-75; Continuous Collector Current Max:100mA; Current Rating:100mA
Bias Resistor Transistor -- 20C1181 Bias Resistor Transistor; Collector Emitter Voltage V(br)ceo:50V; Base Input Resistor R1:22kohm; Resistor Ratio, R1 / R2:1; RF Transistor Case:SOT-23; No. of Pins:3; Continuous Collector Current Max:100mA; Current Rating:100mA
Bias Resistor Transistor -- 20C1185
Bias Resistor Transistor -- 45J1619
Bias Resistor Transistor; Collector Emitter Voltage V(br)ceo:50V; Base Input Resistor R1:4.7kohm; Base-Emitter Resistor R2:4.7kohm; Resistor Ratio, R1 / R2:1; RF Transistor Case:SOT-23; No. of Pins:3
Bias Resistor Transistor -- 19C1490 Bias Resistor Transistor; Collector Emitter Voltage V(br)ceo:50V; Base Input Resistor R1:4.7kohm; Base-Emitter Resistor R2:47kohm; Resistor Ratio, R1 / R2:0.1; RF Transistor Case:SC-75; Continuous Collector Current Max:100mA
Bias Resistor Transistor -- 20C1254 Bias Resistor Transistor; Collector Emitter Voltage V(br)ceo:50V; Base Input Resistor R1:4.7kohm; Base-Emitter Resistor R2:47kohm; Resistor Ratio, R1 / R2:0.1; RF Transistor Case:SOT-323; Continuous Collector Current Max:100mA
Bias Resistor Transistor -- 20C1253 Bias Resistor Transistor; Collector Emitter Voltage V(br)ceo:50V; Base Input Resistor R1:4.7kohm; Base-Emitter Resistor R2:47kohm; Resistor Ratio, R1 / R2:0.1; RF Transistor Case:SOT-363; Continuous Collector Current Max:100mA
Bias Resistor Transistor -- 24C5464 Bias Resistor Transistor; Collector Emitter Voltage V(br)ceo:50V; Base Input Resistor R1:4.7kohm; Base-Emitter Resistor R2:47kohm; RF Transistor Case:SC-75; Continuous Collector Current Max:100mA; Current Rating:100mA
Bias Resistor Transistor -- 25C7980 Bias Resistor Transistor; Collector Emitter Voltage V(br)ceo:50V; Base Input Resistor R1:4.7kohm; RF Transistor Case:SC-75; Continuous Collector Current Max:100mA; Current Rating:100mA; DC Current Gain Min (hfe):15
Bias Resistor Transistor -- 19C1489
Bias Resistor Transistor -- 24C5462
Bias Resistor Transistor -- 88H4629
Bias Resistor Transistor; Collector Emitter Voltage V(br)ceo:50V; Base Input Resistor R1:4.7kohm; RF Transistor Case:SC-75; Continuous Collector Current Max:100mA; Current Rating:100mA; DC Current Gain Min (hfe):160
Bias Resistor Transistor -- 20C1183
Bias Resistor Transistor -- 26K4610
Bias Resistor Transistor; Collector Emitter Voltage V(br)ceo:50V; Base Input Resistor R1:4.7kohm; RF Transistor Case:SOT-23; No. of Pins:3; Continuous Collector Current Max:100mA; Current Rating:100mA; DC Current Gain Min (hfe):160
Bias Resistor Transistor -- 08F1958 Bias Resistor Transistor; Collector Emitter Voltage V(br)ceo:50V; Base Input Resistor R1:47kohm; Base-Emitter Resistor R2:47kohm; Resistor Ratio, R1 / R2:1; RF Transistor Case:SC-59; Continuous Collector Current Max:100mA
Bias Resistor Transistor -- 19C1484
Bias Resistor Transistor -- 19C1491
Bias Resistor Transistor; Collector Emitter Voltage V(br)ceo:50V; Base Input Resistor R1:47kohm; Base-Emitter Resistor R2:47kohm; Resistor Ratio, R1 / R2:1; RF Transistor Case:SC-75; Continuous Collector Current Max:100mA
Bias Resistor Transistor -- 20C1250 Bias Resistor Transistor; Collector Emitter Voltage V(br)ceo:50V; Base Input Resistor R1:47kohm; Base-Emitter Resistor R2:47kohm; Resistor Ratio, R1 / R2:1; RF Transistor Case:SOT-323; Continuous Collector Current Max:100mA
Bias Resistor Transistor -- 07F9283 Bias Resistor Transistor; Collector Emitter Voltage V(br)ceo:50V; Base Input Resistor R1:47kohm; Resistor Ratio, R1 / R2:1; RF Transistor Case:SOT-23; No. of Pins:3; Continuous Collector Current Max:100mA; Current Rating:100mA
Bias Resistor Transistor -- 08F1946
Bias Resistor Transistor -- 67H6951
Bias Resistor Transistor; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:10kohm; Base-Emitter Resistor R2:10kohm; Resistor Ratio, R1 / R2:1; RF Transistor Case:SC-59
Bias Resistor Transistor -- 24C5449 Bias Resistor Transistor; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:10kohm; Base-Emitter Resistor R2:10kohm; Resistor Ratio, R1 / R2:1; RF Transistor Case:SC-75
Bias Resistor Transistor -- 67R1379 Bias Resistor Transistor; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:10kohm; Base-Emitter Resistor R2:10kohm; Resistor Ratio, R1 / R2:1; RF Transistor Case:SOT-23
Bias Resistor Transistor -- 24C5453 Bias Resistor Transistor; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:10kohm; Base-Emitter Resistor R2:47kohm; Resistor Ratio, R1 / R2:0.21; RF Transistor Case:SC-75
Bias Resistor Transistor -- 24C5451 Bias Resistor Transistor; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:10kohm; RF Transistor Case:SC-75; No. of Pins:3; DC Current Gain Min (hfe):160
Bias Resistor Transistor -- 24C5474 Bias Resistor Transistor; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:4.7kohm; RF Transistor Case:SC-75; No. of Pins:3; DC Current Gain Min (hfe):160
Bias Resistor Transistor -- 20C1240 Bias Resistor Transistor; Continuous Collector Current Ic:100mA; Base Input Resistor R1:22kohm; Base-Emitter Resistor R2:22kohm; Resistor Ratio, R1 / R2:1; RF Transistor Case:SC-59; No. of Pins:3; Leaded Process Compatible:No
Bias Resistor Transistor -- 75C4476 Bias Resistor Transistor; RF Transistor Case:SOT-363; C-E Breakdown Voltage:50V; Current Rating:-150/150mA; Drain-Source Breakdown Voltage:50V; Leaded Process Compatible:No; Package / Case:SOT-363; Peak Reflow Compatible (260 C):No
Bias Resistor Transistor -- 20C1186 Bias Resistor Transistor; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:50V; Base Input Resistor R1:4.7kohm; Base-Emitter Resistor R2:4.7kohm; Continuous Collector Current Max:100mA; Current Rating:100mA
Bias Resistor Transistor -- 07F9285 Bias Resistor Transistor; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:50V; No. of Pins:3; Base Input Resistor R1:10kohm; Base-Emitter Resistor R2:10kohm; Continuous Collector Current Max:100mA; Current Rating:100mA
Bias Resistor Transistor -- 07F9288 Bias Resistor Transistor; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:50V; No. of Pins:3; Base Input Resistor R1:10kohm; Base-Emitter Resistor R2:47kohm; Continuous Collector Current Max:100mA; Current Rating:100mA
Bias Resistor Transistor -- 07F9286 Bias Resistor Transistor; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:50V; No. of Pins:3; Base Input Resistor R1:22kohm; Base-Emitter Resistor R2:22kohm; Continuous Collector Current Max:100mA; Current Rating:100mA
Bias Resistor Transistor -- 07F9287 Bias Resistor Transistor; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:50V; No. of Pins:3; Base Input Resistor R1:47kohm; Base-Emitter Resistor R2:47kohm; Continuous Collector Current Max:100mA; Current Rating:100mA
Bias Resistor Transistor -- 45J1622 Bias Resistor Transistor; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:50V; Power Dissipation Pd:246mW; DC Collector Current:100mA; DC Current Gain hFE:140; No. of Pins:3; Base Input Resistor R1:47kohm
BIPOLAR POWER TRANSISTOR -- 20C1208 BIPOLAR POWER TRANSISTOR; Current Rating:100A; Leaded Process Compatible:No; Package / Case:SC-59; Peak Reflow Compatible (260 C):No; Voltage Rating:50V
Bipolar Power Transistor -- 29C4563 Bipolar Power Transistor; Transistor Polarity:NPN; DC Collector Current:12A; DC Current Gain hFE:200; C-E Breakdown Voltage:140V; DC Current Gain Min (hfe):20; Leaded Process Compatible:No; Mounting Type:Through Hole
Bipolar Power Transistor -- 42K1360 Bipolar Power Transistor; Transistor Polarity:NPN; DC Collector Current:3A; DC Current Gain hFE:200; C-E Breakdown Voltage:30V; Leaded Process Compatible:Yes; Package / Case:SOT-223; Peak Reflow Compatible (260 C):Yes
Bipolar Power Transistor -- 29C4526 Bipolar Power Transistor; Transistor Polarity:NPN; DC Current Gain hFE:200; C-E Breakdown Voltage:80V; Current Rating:500mA; DC Current Gain Min (hfe):35; Leaded Process Compatible:No; Mounting Type:Through Hole
BIPOLAR TRANS, PNP, QUAD, -40V, DIP -- 29C4480 BIPOLAR TRANS, PNP, QUAD, -40V, DIP; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:40V; Transition Frequency Typ ft:200MHz; Power Dissipation Pd:650mW; DC Collector Current:600mA; DC Current Gain hFE:100
Bipolar Transistor -- 01H0317
Bipolar Transistor -- 01H0320
Bipolar Transistor -- 01H0321
Bipolar Transistor; C-E Breakdown Voltage:60V; Package / Case:TO-220
Bipolar Transistor -- 01H0322 Bipolar Transistor; C-E Breakdown Voltage:80V; Package / Case:TO-220
Bipolar Transistor -- 01F1613 Bipolar Transistor; Current Rating:1A; Leaded Process Compatible:No; Package / Case:D-PAK; Peak Reflow Compatible (260 C):No; Voltage Rating:350V
07F8489
07F8491
09F5403
09F5467
09F5567
09F5831
09F6419
18C6292
51B393
Bipolar Transistor
46T9170 COMPLEMENTARY POWER DARLINGTON T
46T9180
46T9182
46T9246
COMPLEMENTARY SILICON POWER DARL
46T9282 COMPLEMENTARY SILICON POWER TRAN
33C3963 IC
46T9259 MOSFET 200V 11A
46T9197 NP TRAN 700V 8A
46T9196 NPN 450 V 24 A High Voltage Power Transistor Flange Mount -TO-247-3
46T9200 NPN 700 V 8 A High Voltage Power Transistor - TO-247-3
46T9297 NPN DARL 100V 10A
46T9166
46T9271
NPN DARL 100V 15A
46T9288 NPN DARL 100V 5A
46T9201
46T9279
NPN DARL 200V 8A
46T9194
46T9202
46T9203
NPN DARL 400V 10A
46T9204
46T9205
46T9268
NPN DARL 400V 15A
46T9267
46T9335
46T9338
NPN DARL 80V 4A
46T9320
46T9321
46T9322
46T9326
NPN GEN.PURPOSE
46T9247 NPN LOW LEVEL AMP.
46T9304
46T9343
NPN MEDIUM POWER TRANSISTOR - CO
46T9342 NPN SILICON POWER TRANSISTOR
46T9309 NPN TRAN 100V 10A
46T9185 NPN TRAN 100V 15A
46T9176
46T9183
NPN TRAN 100V 6A
46T9266 NPN TRAN 30V 4A
46T9341 NPN TRAN 400V 15A
46T9188
46T9192
NPN TRAN 400V 5A
46T9195 NPN TRAN 450V 30A
46T9189 NPN TRAN 450V 4A
46T9179 NPN TRAN 60V 6A
46T9187 NPN TRAN 800V 4A
46T9172 NPN TRAN 80V 1.5A
46T9174 NPN TRAN 80V 2A
46T9261 NPN TRAN 80V 3A
46T9181 NPN TRAN 80V 6A
46T9328 NPN TRANS 40V 30A
46T9331 NPN TRANS 60V 4A
46T9332 NPN TRANS 80V 4A
31C4116 NTE SILICON TRANSISTOR, APPLICATION: DUAL, DIFFERENTIAL AMPLIFIER, HIGH GAIN, LOW NOISE, COMMON EMITTER, MAXIMUM BREAKDOWN VOLTAGE: 100 V, MAXIMUM COLLECTOR CURRENT: .05 A, MAXIMUM COLLECTOR DISSIPATION: .2 W/UNIT .4 W...
09F1867
09F1870
PERIPHERAL DRIVERS
46T9300 PNP DARL 100V 10A
46T9292 PNP DARL 100V 5A
46T9294 PNP DARL 60V 8A
46T9334 PNP DARL 80V 4A
46T9312
46T9323
46T9324
46T9325
PNP GEN.PURPOSE
46T9310 PNP TRAN 100V 10A
46T9186 PNP TRAN 100V 15A
46T9177
46T9184
PNP TRAN 100V 6A
46T9280
46T9337
PNP TRAN 30V 7A
46T9248 PNP TRAN 45V 10A
46T9249
46T9262
PNP TRAN 60V 10A
46T9339 PNP TRAN 80V 1.5A
46T9175 PNP TRAN 80V 2A
46T9260 PNP TRAN 80V 3A
46T9333 PNP TRANS 80V 4A
46T9199 Trans GP BJT NPN 700V 8A 3-Pin
46T9190 TRANS NPN 1600V 6A TO220
06F2317
37C2945
37C2948
37C2950
37C2957
Transistor Array IC
38C4350 Transistor kit
38C5004 Transistor Reference Software, Compiled so the user can substitute transistors that perform the same, despite their different part numbers. Crosses are made according to maximum ratings and electrical characteristics, approximately...
37C5244 Transistor, Type: SI-N, Voltage: 40 V, Current: .5 A, Power: 2.5 W, Frequency: 1.5 GHz
05F8298
39C4561
48F4270
Transistor

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